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Proton irradiation of EMCCDs

Publication ,  Journal Article
Smith, DR; Ingley, R; Holland, AD
Published in: IEEE Transactions on Electron Devices
February 1, 2006

This paper describes the irradiation of 95 electron multiplication charge coupled devices (EMCCDs) at the Paul Scherrer Institut (PSI) in Switzerland, to investigate the effects of proton irradiation on the operational characteristics of CCDs featuring electron multiplication technology for space use. This work was carried out in support of the CCD development for the radial velocity spectrometer (RVS) instrument of the European Space Agency's cornerstone Gaia mission. Previous proton irradiations of EMCCDs, have shown the technology to be radiation hard to ∼10 × the required six-year Gaia lifetime proton fluence, with no device failures or unexpected operational changes. The purpose of the study described in this paper was to further investigate the statistical probability of device failure as a result of radiation damage, the large number of devices and high proton fluence used, making the study equivalent to testing ∼50 complete RVS CCD focal planes to the expected end of life proton dose. An outline of the earlier EMCCD proton irradiations is given, followed by a detailed description of the proton irradiation and characterization of the 95 devices used in this latest study. © 2006 IEEE.

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Published In

IEEE Transactions on Electron Devices

DOI

ISSN

0018-9383

Publication Date

February 1, 2006

Volume

53

Issue

2

Start / End Page

205 / 210

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering
 

Citation

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Smith, D. R., Ingley, R., & Holland, A. D. (2006). Proton irradiation of EMCCDs. IEEE Transactions on Electron Devices, 53(2), 205–210. https://doi.org/10.1109/TED.2005.861730
Smith, D. R., R. Ingley, and A. D. Holland. “Proton irradiation of EMCCDs.” IEEE Transactions on Electron Devices 53, no. 2 (February 1, 2006): 205–10. https://doi.org/10.1109/TED.2005.861730.
Smith DR, Ingley R, Holland AD. Proton irradiation of EMCCDs. IEEE Transactions on Electron Devices. 2006 Feb 1;53(2):205–10.
Smith, D. R., et al. “Proton irradiation of EMCCDs.” IEEE Transactions on Electron Devices, vol. 53, no. 2, Feb. 2006, pp. 205–10. Scopus, doi:10.1109/TED.2005.861730.
Smith DR, Ingley R, Holland AD. Proton irradiation of EMCCDs. IEEE Transactions on Electron Devices. 2006 Feb 1;53(2):205–210.

Published In

IEEE Transactions on Electron Devices

DOI

ISSN

0018-9383

Publication Date

February 1, 2006

Volume

53

Issue

2

Start / End Page

205 / 210

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering