Skip to main content
Analog and VLSI Circuits

Monolithic device models

Publication ,  Chapter
Wilamowski, BM; Niu, G; Choma, J; Long, SI; Nguyen, NM; Brooke, MA
January 1, 2009

The bipolar junction transistor (BJT) is historically the first solid-state analog amplifier and digital switch, and formed the basis of integrated circuits (ICs) in the 1970s. Starting in the early 1980s, the MOSFET had gradually taken over, particularly for main stream digital ICs. However, in the 1990s, the invention of silicon-germanium base heterojunction bipolar transistor (SiGe HBT) brought the bipolar transistor back into high-volume commercial production, mainly for the now widespread wireless and wire line communications applications. Today, SiGe HBTs are used to design radio-frequency (RF) ICs and systems for cell phones, wireless local area network (WLAN), automobile collision avoidanc radar, wireless distribution of cable television, millimeter wave radios, and many more applications, due to its outstanding high-frequency performance and ability to integrate with CMOS for realizing digital, analog, and RF functions on the same chip. Below we first introduce the basic concepts of BJT using a historically important equivalent circuit model, the Ebers-Moll model. Then the Gummel-Poon model is introduced, as it is widely used for computer-aided design, and is the basis of modern BJT models like the VBIC, Mextram, and HICUM models. Current gain, high-current phenomena, fabrication technologies, and SiGe HBTs are then discussed.

Duke Scholars

Publication Date

January 1, 2009

Start / End Page

3 / 148
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Wilamowski, B. M., Niu, G., Choma, J., Long, S. I., Nguyen, N. M., & Brooke, M. A. (2009). Monolithic device models. In Analog and VLSI Circuits (pp. 3–148).
Wilamowski, B. M., G. Niu, J. Choma, S. I. Long, N. M. Nguyen, and M. A. Brooke. “Monolithic device models.” In Analog and VLSI Circuits, 3–148, 2009.
Wilamowski BM, Niu G, Choma J, Long SI, Nguyen NM, Brooke MA. Monolithic device models. In: Analog and VLSI Circuits. 2009. p. 3–148.
Wilamowski, B. M., et al. “Monolithic device models.” Analog and VLSI Circuits, 2009, pp. 3–148.
Wilamowski BM, Niu G, Choma J, Long SI, Nguyen NM, Brooke MA. Monolithic device models. Analog and VLSI Circuits. 2009. p. 3–148.

Publication Date

January 1, 2009

Start / End Page

3 / 148