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Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing.

Publication ,  Journal Article
Lu, S; Cardenas, JA; Worsley, R; Williams, NX; Andrews, JB; Casiraghi, C; Franklin, AD
Published in: ACS nano
October 2019

Semiconducting carbon nanotubes (CNTs) printed into thin films offer high electrical performance, significant mechanical stability, and compatibility with low-temperature processing. Yet, the implementation of low-temperature printed devices, such as CNT thin-film transistors (CNT-TFTs), has been hindered by relatively high process temperature requirements imposed by other device layers-dielectrics and contacts. In this work, we overcome temperature constraints and demonstrate 1D-2D thin-film transistors (1D-2D TFTs) in a low-temperature (maximum exposure ≤80 °C) full print-in-place process (i.e., no substrate removal from printer throughout the entire process) using an aerosol jet printer. Semiconducting 1D CNT channels are used with a 2D hexagonal boron nitride (h-BN) gate dielectric and traces of silver nanowires as the conductive electrodes, all deposited using the same printer. The aerosol jet-printed 2D h-BN films were realized via proper ink formulation, such as utilizing the binder hydroxypropyl methylcellulose, which suppresses redispersion between adjacent printed layers. In addition to an ON/OFF current ratio up to 3.5 × 105, channel mobility up to 10.7 cm2·V-1·s-1, and low gate hysteresis, 1D-2D TFTs exhibit extraordinary mechanical stability under bending due to the nanoscale network structure of each layer, with minimal changes in performance after 1000 bending test cycles at 2.1% strain. It is also confirmed that none of the device layers require high-temperature treatment to realize optimal performance. These findings provide an attractive approach toward a cost-effective, direct-write realization of electronics.

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Published In

ACS nano

DOI

EISSN

1936-086X

ISSN

1936-0851

Publication Date

October 2019

Volume

13

Issue

10

Start / End Page

11263 / 11272

Related Subject Headings

  • Nanoscience & Nanotechnology
 

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Lu, S., Cardenas, J. A., Worsley, R., Williams, N. X., Andrews, J. B., Casiraghi, C., & Franklin, A. D. (2019). Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing. ACS Nano, 13(10), 11263–11272. https://doi.org/10.1021/acsnano.9b04337
Lu, Shiheng, Jorge A. Cardenas, Robyn Worsley, Nicholas X. Williams, Joseph B. Andrews, Cinzia Casiraghi, and Aaron D. Franklin. “Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing.ACS Nano 13, no. 10 (October 2019): 11263–72. https://doi.org/10.1021/acsnano.9b04337.
Lu S, Cardenas JA, Worsley R, Williams NX, Andrews JB, Casiraghi C, et al. Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing. ACS nano. 2019 Oct;13(10):11263–72.
Lu, Shiheng, et al. “Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing.ACS Nano, vol. 13, no. 10, Oct. 2019, pp. 11263–72. Epmc, doi:10.1021/acsnano.9b04337.
Lu S, Cardenas JA, Worsley R, Williams NX, Andrews JB, Casiraghi C, Franklin AD. Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing. ACS nano. 2019 Oct;13(10):11263–11272.
Journal cover image

Published In

ACS nano

DOI

EISSN

1936-086X

ISSN

1936-0851

Publication Date

October 2019

Volume

13

Issue

10

Start / End Page

11263 / 11272

Related Subject Headings

  • Nanoscience & Nanotechnology