New Observations in Contact Scaling for 2D FETs

Atomically thin 2D crystals are promising channel materials for extremely scaled field-effect transistors (FETs). For devices at the scaled regime, both channel and contact length must be scaled. However, contacting 2D materials at scaled contact lengths (L-{c} < 30 \mathrm{nm}) has rarely been pursued or studied in-depth1. An example of a top-contacted FET is shown in Fig. 1 with L-{c} and transfer length (L-{T}) labeled and a summary of state-of-the-art studies listed in Table 1. In this work, we experimentally scaled the contact length for MoS 2D FETs with varying channel thicknesses and found that, contrary to previous reports, top contacts can be scaled down to 20 nm without noticeable degradation in transistor performance.

Duke Scholars

Author Aaron D. Franklin Electrical and Computer Engineering