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Facet-selective etching trajectories of individual semiconductor nanocrystals.

Publication ,  Journal Article
Yan, C; Byrne, D; Ondry, JC; Kahnt, A; Moreno-Hernandez, IA; Kamat, GA; Liu, Z-J; Laube, C; Crook, MF; Zhang, Y; Ercius, P; Alivisatos, AP
Published in: Science advances
August 2022

The size and shape of semiconductor nanocrystals govern their optical and electronic properties. Liquid cell transmission electron microscopy (LCTEM) is an emerging tool that can directly visualize nanoscale chemical transformations and therefore inform the precise synthesis of nanostructures with desired functions. However, it remains difficult to controllably investigate the reactions of semiconductor nanocrystals with LCTEM, because of the highly reactive environment formed by radiolysis of liquid. Here, we harness the radiolysis processes and report the single-particle etching trajectories of prototypical semiconductor nanomaterials with well-defined crystalline facets. Lead selenide nanocubes represent an isotropic structure that retains the cubic shape during etching via a layer-by-layer mechanism. The anisotropic arrow-shaped cadmium selenide nanorods have polar facets terminated by either cadmium or selenium atoms, and the transformation trajectory is driven by etching the selenium-terminated facets. LCTEM trajectories reveal how nanoscale shape transformations of semiconductors are governed by the reactivity of specific facets in liquid environments.

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Published In

Science advances

DOI

EISSN

2375-2548

ISSN

2375-2548

Publication Date

August 2022

Volume

8

Issue

32

Start / End Page

eabq1700
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Yan, C., Byrne, D., Ondry, J. C., Kahnt, A., Moreno-Hernandez, I. A., Kamat, G. A., … Alivisatos, A. P. (2022). Facet-selective etching trajectories of individual semiconductor nanocrystals. Science Advances, 8(32), eabq1700. https://doi.org/10.1126/sciadv.abq1700
Yan, Chang, Dana Byrne, Justin C. Ondry, Axel Kahnt, Ivan A. Moreno-Hernandez, Gaurav A. Kamat, Zi-Jie Liu, et al. “Facet-selective etching trajectories of individual semiconductor nanocrystals.Science Advances 8, no. 32 (August 2022): eabq1700. https://doi.org/10.1126/sciadv.abq1700.
Yan C, Byrne D, Ondry JC, Kahnt A, Moreno-Hernandez IA, Kamat GA, et al. Facet-selective etching trajectories of individual semiconductor nanocrystals. Science advances. 2022 Aug;8(32):eabq1700.
Yan, Chang, et al. “Facet-selective etching trajectories of individual semiconductor nanocrystals.Science Advances, vol. 8, no. 32, Aug. 2022, p. eabq1700. Epmc, doi:10.1126/sciadv.abq1700.
Yan C, Byrne D, Ondry JC, Kahnt A, Moreno-Hernandez IA, Kamat GA, Liu Z-J, Laube C, Crook MF, Zhang Y, Ercius P, Alivisatos AP. Facet-selective etching trajectories of individual semiconductor nanocrystals. Science advances. 2022 Aug;8(32):eabq1700.

Published In

Science advances

DOI

EISSN

2375-2548

ISSN

2375-2548

Publication Date

August 2022

Volume

8

Issue

32

Start / End Page

eabq1700