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Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS

Publication ,  Journal Article
Senevirathna, MKI; Williams, MD; Cooke, GA; Kozhanov, A; Vernon, M; Cross, GB
Published in: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
May 1, 2020
Published version (DOI) Publisher Link

The authors present a quantitative secondary ion mass spectrometry (SIMS) analysis of the useful ion yield of magnesium dopant in a gallium nitride matrix. A quadrupole SIMS instrument was used to analyze an Mg-doped GaN sample grown by metal organic chemical vapor deposition. Oxygen (O2+) was used as the primary ion beam and its energy was varied in the range from 0.5 to 5 kV with and without oxygen flooding near the sample. The results of the analysis can be used to determine the primary beam energies for optimal magnesium sensitivity.

Duke Scholars

Alexander Y. Kozhanov
Author Alexander Y. Kozhanov Electrical and Computer Engineering
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Published In

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

DOI

10.1116/1.5144500

EISSN

2166-2754

ISSN

2166-2746

Publication Date

May 1, 2020

Volume

38

Issue

3

Publisher

American Vacuum Society

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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Senevirathna, M. K. I., Williams, M. D., Cooke, G. A., Kozhanov, A., Vernon, M., & Cross, G. B. (2020). Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 38(3). https://doi.org/10.1116/1.5144500
Senevirathna, MK Indika, Michael D. Williams, Graham A. Cooke, Alexander Kozhanov, Mark Vernon, and Garnett B. Cross. “Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 38, no. 3 (May 1, 2020). https://doi.org/10.1116/1.5144500.
Senevirathna MKI, Williams MD, Cooke GA, Kozhanov A, Vernon M, Cross GB. Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 2020 May 1;38(3).
Senevirathna, MK Indika, et al. “Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 38, no. 3, American Vacuum Society, May 2020. Crossref, doi:10.1116/1.5144500.
Senevirathna MKI, Williams MD, Cooke GA, Kozhanov A, Vernon M, Cross GB. Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. American Vacuum Society; 2020 May 1;38(3).

Published In

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

DOI

10.1116/1.5144500

EISSN

2166-2754

ISSN

2166-2746

Publication Date

May 1, 2020

Volume

38

Issue

3

Publisher

American Vacuum Society

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences