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Fermi Level Pinning and Negative Magnetoresistance in PbTe:(Mn, Cr)

Publication ,  Journal Article
Morozov, AV; Kozhanov, AE; Artamkin, AI; Slyn'ko, EI; Slyn'ko, VE; Dobrovolski, WD; Story, T; Khokhlov, DR
Published in: Semiconductors
January 1, 2004

Fermi level pinning and persistent photoconductivity are observed in PbTe:(Mn, Cr) at T < 35 K. The impurity level that pins the chemical potential level shifts toward the bottom of the conduction band with increasing manganese content. Negative magnetoresistance at low temperatures is observed. The magnitude of this effect amounts to about 30% at T = 4.2 K. The effect is caused by the specific features of electron transport through the impurity band in a magnetic field. © 2004 MAIK "Nauka/Interperiodica".

Duke Scholars

Published In

Semiconductors

DOI

ISSN

1063-7826

Publication Date

January 1, 2004

Volume

38

Issue

1

Start / End Page

27 / 30

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 0206 Quantum Physics
  • 0204 Condensed Matter Physics
 

Citation

APA
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ICMJE
MLA
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Morozov, A. V., Kozhanov, A. E., Artamkin, A. I., Slyn’ko, E. I., Slyn’ko, V. E., Dobrovolski, W. D., … Khokhlov, D. R. (2004). Fermi Level Pinning and Negative Magnetoresistance in PbTe:(Mn, Cr). Semiconductors, 38(1), 27–30. https://doi.org/10.1134/1.1641128
Morozov, A. V., A. E. Kozhanov, A. I. Artamkin, E. I. Slyn’ko, V. E. Slyn’ko, W. D. Dobrovolski, T. Story, and D. R. Khokhlov. “Fermi Level Pinning and Negative Magnetoresistance in PbTe:(Mn, Cr).” Semiconductors 38, no. 1 (January 1, 2004): 27–30. https://doi.org/10.1134/1.1641128.
Morozov AV, Kozhanov AE, Artamkin AI, Slyn’ko EI, Slyn’ko VE, Dobrovolski WD, et al. Fermi Level Pinning and Negative Magnetoresistance in PbTe:(Mn, Cr). Semiconductors. 2004 Jan 1;38(1):27–30.
Morozov, A. V., et al. “Fermi Level Pinning and Negative Magnetoresistance in PbTe:(Mn, Cr).” Semiconductors, vol. 38, no. 1, Jan. 2004, pp. 27–30. Scopus, doi:10.1134/1.1641128.
Morozov AV, Kozhanov AE, Artamkin AI, Slyn’ko EI, Slyn’ko VE, Dobrovolski WD, Story T, Khokhlov DR. Fermi Level Pinning and Negative Magnetoresistance in PbTe:(Mn, Cr). Semiconductors. 2004 Jan 1;38(1):27–30.
Journal cover image

Published In

Semiconductors

DOI

ISSN

1063-7826

Publication Date

January 1, 2004

Volume

38

Issue

1

Start / End Page

27 / 30

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 0206 Quantum Physics
  • 0204 Condensed Matter Physics