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A high frequency MOSFET driver for the TITAN facility at TRIUMF

Publication ,  Conference
Barnes, MJ; Wait, GD; Dilling, J; Vaz, JV; Blomeley, L; Hadary, O; Smith, MJ
Published in: Digest of Technical Papers-IEEE International Pulsed Power Conference
December 1, 2007

TRIUMF's Ion Trap for Atomic and Nuclear Science (TITAN) Radio Frequency Quadrupole (RFQ) Beam Cooler is a device cools and collects short-lived isotopes, with half-lives as short as 10 ms, created by an Isotope Separator and Accelerator (ISAC). An RF square wave driver (RFSWD), that must have rise and fall times of less than 125 ns (10% to 90%), performs 2-dimensional focusing of the ion beam within the RFQ, along planes normal to the beam's intended trajectory, to confine ion motion along a stable path; hence the ions can be trapped and collected for extraction. The RFSWD, which is based on previous kicker designs developed at TRIUMF [1], employs stacks of MOSFETs, operating in push-pull, to generate High Voltage (HV) rectangular waveforms at a prescribed frequency and duty cycle. Currently a 500 V, 2 MHz drive system is undergoing tests, however, the system configuration allows for operation with higher voltage amplitudes and a repetition rate from 300 kHz up to 3 MHz, continuous. Technical details of the design, operation and performance of the RFQ system, in particular of the drive system, are presented. © 2005 IEEE.

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Digest of Technical Papers-IEEE International Pulsed Power Conference

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Publication Date

December 1, 2007

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178 / 181
 

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Barnes, M. J., Wait, G. D., Dilling, J., Vaz, J. V., Blomeley, L., Hadary, O., & Smith, M. J. (2007). A high frequency MOSFET driver for the TITAN facility at TRIUMF. In Digest of Technical Papers-IEEE International Pulsed Power Conference (pp. 178–181). https://doi.org/10.1109/PPC.2005.300554
Barnes, M. J., G. D. Wait, J. Dilling, J. V. Vaz, L. Blomeley, O. Hadary, and M. J. Smith. “A high frequency MOSFET driver for the TITAN facility at TRIUMF.” In Digest of Technical Papers-IEEE International Pulsed Power Conference, 178–81, 2007. https://doi.org/10.1109/PPC.2005.300554.
Barnes MJ, Wait GD, Dilling J, Vaz JV, Blomeley L, Hadary O, et al. A high frequency MOSFET driver for the TITAN facility at TRIUMF. In: Digest of Technical Papers-IEEE International Pulsed Power Conference. 2007. p. 178–81.
Barnes, M. J., et al. “A high frequency MOSFET driver for the TITAN facility at TRIUMF.” Digest of Technical Papers-IEEE International Pulsed Power Conference, 2007, pp. 178–81. Scopus, doi:10.1109/PPC.2005.300554.
Barnes MJ, Wait GD, Dilling J, Vaz JV, Blomeley L, Hadary O, Smith MJ. A high frequency MOSFET driver for the TITAN facility at TRIUMF. Digest of Technical Papers-IEEE International Pulsed Power Conference. 2007. p. 178–181.

Published In

Digest of Technical Papers-IEEE International Pulsed Power Conference

DOI

Publication Date

December 1, 2007

Start / End Page

178 / 181