Thermal Characteristics of III/V Thin Film Edge Emitting Lasers on Silicon

We present thermal characteristics of a strain compensated InGaAs/GaAs SQW-SCH thin film laser, integrated onto silicon with a metalmetal interface, and contacts patterned on both sides of the epitaxial layer to improve current confinement. A threshold current density of 262 A/cm2 is achieved for a 50 µm ridge laser of 800 µm cavity length, with a lasing wavelength of 1001.52 nm. Lasing was achieved up to 60 ºC, and a characteristic temperature To= 49.8 ºK was obtained. Theoretical modeling estimated a junction temperature of 67 °C for CW operation.

Duke Scholars

Author Nan Marie Jokerst Electrical and Computer Engineering