Cheng, W., Liang, R., Tian, H., Sun, C., Jiang, C., Wang, X., … Xu, J. (2019). Proton Conductor Gated Synaptic Transistor Based on Transparent IGZO for Realizing Electrical and UV Light Stimulus. IEEE Journal of the Electron Devices Society, 7, 38–45. https://doi.org/10.1109/jeds.2018.2875976

Cheng, Weijun, Renrong Liang, He Tian, Chuanchuan Sun, Chunsheng Jiang, Xiawa Wang, Jing Wang, Tian-Ling Ren, and Jun Xu. “Proton Conductor Gated Synaptic Transistor Based on Transparent IGZO for Realizing Electrical and UV Light Stimulus.” IEEE Journal of the Electron Devices Society 7 (2019): 38–45. https://doi.org/10.1109/jeds.2018.2875976.

Cheng W, Liang R, Tian H, Sun C, Jiang C, Wang X, et al. Proton Conductor Gated Synaptic Transistor Based on Transparent IGZO for Realizing Electrical and UV Light Stimulus. IEEE Journal of the Electron Devices Society. 2019;7:38–45.

Cheng, Weijun, et al. “Proton Conductor Gated Synaptic Transistor Based on Transparent IGZO for Realizing Electrical and UV Light Stimulus.” IEEE Journal of the Electron Devices Society, vol. 7, Institute of Electrical and Electronics Engineers (IEEE), 2019, pp. 38–45. Crossref, doi:10.1109/jeds.2018.2875976.

Cheng W, Liang R, Tian H, Sun C, Jiang C, Wang X, Wang J, Ren T-L, Xu J. Proton Conductor Gated Synaptic Transistor Based on Transparent IGZO for Realizing Electrical and UV Light Stimulus. IEEE Journal of the Electron Devices Society. Institute of Electrical and Electronics Engineers (IEEE); 2019;7:38–45.