Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature
Publication
, Journal Article
Yu, G; Liang, R; Wang, X; Xu, J; Ren, T-L
Published in: Science Bulletin
April 2019
Duke Scholars
Published In
Science Bulletin
DOI
ISSN
2095-9273
Publication Date
April 2019
Volume
64
Issue
7
Start / End Page
469 / 477
Publisher
Elsevier BV
Citation
APA
Chicago
ICMJE
MLA
NLM
Yu, G., Liang, R., Wang, X., Xu, J., & Ren, T.-L. (2019). Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature. Science Bulletin, 64(7), 469–477. https://doi.org/10.1016/j.scib.2019.03.005
Yu, Guofang, Renrong Liang, Xiawa Wang, Jun Xu, and Tian-Ling Ren. “Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature.” Science Bulletin 64, no. 7 (April 2019): 469–77. https://doi.org/10.1016/j.scib.2019.03.005.
Yu G, Liang R, Wang X, Xu J, Ren T-L. Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature. Science Bulletin. 2019 Apr;64(7):469–77.
Yu, Guofang, et al. “Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature.” Science Bulletin, vol. 64, no. 7, Elsevier BV, Apr. 2019, pp. 469–77. Crossref, doi:10.1016/j.scib.2019.03.005.
Yu G, Liang R, Wang X, Xu J, Ren T-L. Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature. Science Bulletin. Elsevier BV; 2019 Apr;64(7):469–477.
Published In
Science Bulletin
DOI
ISSN
2095-9273
Publication Date
April 2019
Volume
64
Issue
7
Start / End Page
469 / 477
Publisher
Elsevier BV