Gate controllable spin transistor with semiconducting tunneling barrier
Publication
, Journal Article
Zhang, S; Liang, R; Wang, X; Chen, W; Cheng, W; Wang, J; Xu, J
Published in: Nano Research
August 2020
Duke Scholars
Published In
Nano Research
DOI
EISSN
1998-0000
ISSN
1998-0124
Publication Date
August 2020
Volume
13
Issue
8
Start / End Page
2192 / 2196
Publisher
Tsinghua University Press
Related Subject Headings
- Nanoscience & Nanotechnology
Citation
APA
Chicago
ICMJE
MLA
NLM
Zhang, S., Liang, R., Wang, X., Chen, W., Cheng, W., Wang, J., & Xu, J. (2020). Gate controllable spin transistor with semiconducting tunneling barrier. Nano Research, 13(8), 2192–2196. https://doi.org/10.1007/s12274-020-2832-7
Zhang, Shuqin, Renrong Liang, Xiawa Wang, Wenjie Chen, Weijun Cheng, Jing Wang, and Jun Xu. “Gate controllable spin transistor with semiconducting tunneling barrier.” Nano Research 13, no. 8 (August 2020): 2192–96. https://doi.org/10.1007/s12274-020-2832-7.
Zhang S, Liang R, Wang X, Chen W, Cheng W, Wang J, et al. Gate controllable spin transistor with semiconducting tunneling barrier. Nano Research. 2020 Aug;13(8):2192–6.
Zhang, Shuqin, et al. “Gate controllable spin transistor with semiconducting tunneling barrier.” Nano Research, vol. 13, no. 8, Tsinghua University Press, Aug. 2020, pp. 2192–96. Crossref, doi:10.1007/s12274-020-2832-7.
Zhang S, Liang R, Wang X, Chen W, Cheng W, Wang J, Xu J. Gate controllable spin transistor with semiconducting tunneling barrier. Nano Research. Tsinghua University Press; 2020 Aug;13(8):2192–2196.
Published In
Nano Research
DOI
EISSN
1998-0000
ISSN
1998-0124
Publication Date
August 2020
Volume
13
Issue
8
Start / End Page
2192 / 2196
Publisher
Tsinghua University Press
Related Subject Headings
- Nanoscience & Nanotechnology