The structure of films formed by γ-aminopropyltriethoxysilane adsorbed onto copper
Publication
, Journal Article
Boerio, FJ; Williams, JW; Burkstrand, JM
Published in: Journal of Colloid and Interface Science
February 1983
Duke Scholars
Published In
Journal of Colloid and Interface Science
DOI
ISSN
0021-9797
Publication Date
February 1983
Volume
91
Issue
2
Start / End Page
485 / 495
Publisher
Elsevier BV
Related Subject Headings
- Chemical Physics
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Boerio, F. J., Williams, J. W., & Burkstrand, J. M. (1983). The structure of films formed by γ-aminopropyltriethoxysilane adsorbed onto copper. Journal of Colloid and Interface Science, 91(2), 485–495. https://doi.org/10.1016/0021-9797(83)90362-4
Boerio, F. J., J. W. Williams, and J. M. Burkstrand. “The structure of films formed by γ-aminopropyltriethoxysilane adsorbed onto copper.” Journal of Colloid and Interface Science 91, no. 2 (February 1983): 485–95. https://doi.org/10.1016/0021-9797(83)90362-4.
Boerio FJ, Williams JW, Burkstrand JM. The structure of films formed by γ-aminopropyltriethoxysilane adsorbed onto copper. Journal of Colloid and Interface Science. 1983 Feb;91(2):485–95.
Boerio, F. J., et al. “The structure of films formed by γ-aminopropyltriethoxysilane adsorbed onto copper.” Journal of Colloid and Interface Science, vol. 91, no. 2, Elsevier BV, Feb. 1983, pp. 485–95. Crossref, doi:10.1016/0021-9797(83)90362-4.
Boerio FJ, Williams JW, Burkstrand JM. The structure of films formed by γ-aminopropyltriethoxysilane adsorbed onto copper. Journal of Colloid and Interface Science. Elsevier BV; 1983 Feb;91(2):485–495.
Published In
Journal of Colloid and Interface Science
DOI
ISSN
0021-9797
Publication Date
February 1983
Volume
91
Issue
2
Start / End Page
485 / 495
Publisher
Elsevier BV
Related Subject Headings
- Chemical Physics
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences