
Coexistence of excitonic lasing with electron-hole plasma spontaneous emission in one-dimensional semiconductor structures
Publication
, Journal Article
Rubio, J; Pfeiffer, L; Szymanska, MH; Pinczuk, A; He, S; Baranger, HU; Littlewood, PB; West, KW; Dennis, BS
Published in: Solid State Communications
November 19, 2001
We report that excitonic lasing gain coexists with spontaneous optical emission characteristic of an electron-hole plasma in highly photoexcited one-dimensional semiconductors. The experiments probe quantum T-wire laser structures optimized for high photoexcitation. Evidence of dense electron-hole plasma is clearly seen in the spontaneous recombination measured when lasing emission displays distinct excitonic character. These findings differ strikingly from those in higher dimentional semiconductors, and offer insights on optical processes considered by recent theories of dense electron-hole plasmas. © 2001 Published by Elsevier Science Ltd.
Duke Scholars
Published In
Solid State Communications
DOI
ISSN
0038-1098
Publication Date
November 19, 2001
Volume
120
Issue
11
Start / End Page
423 / 427
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 3403 Macromolecular and materials chemistry
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Rubio, J., Pfeiffer, L., Szymanska, M. H., Pinczuk, A., He, S., Baranger, H. U., … Dennis, B. S. (2001). Coexistence of excitonic lasing with electron-hole plasma spontaneous emission in one-dimensional semiconductor structures. Solid State Communications, 120(11), 423–427. https://doi.org/10.1016/S0038-1098(01)00418-5
Rubio, J., L. Pfeiffer, M. H. Szymanska, A. Pinczuk, S. He, H. U. Baranger, P. B. Littlewood, K. W. West, and B. S. Dennis. “Coexistence of excitonic lasing with electron-hole plasma spontaneous emission in one-dimensional semiconductor structures.” Solid State Communications 120, no. 11 (November 19, 2001): 423–27. https://doi.org/10.1016/S0038-1098(01)00418-5.
Rubio J, Pfeiffer L, Szymanska MH, Pinczuk A, He S, Baranger HU, et al. Coexistence of excitonic lasing with electron-hole plasma spontaneous emission in one-dimensional semiconductor structures. Solid State Communications. 2001 Nov 19;120(11):423–7.
Rubio, J., et al. “Coexistence of excitonic lasing with electron-hole plasma spontaneous emission in one-dimensional semiconductor structures.” Solid State Communications, vol. 120, no. 11, Nov. 2001, pp. 423–27. Scopus, doi:10.1016/S0038-1098(01)00418-5.
Rubio J, Pfeiffer L, Szymanska MH, Pinczuk A, He S, Baranger HU, Littlewood PB, West KW, Dennis BS. Coexistence of excitonic lasing with electron-hole plasma spontaneous emission in one-dimensional semiconductor structures. Solid State Communications. 2001 Nov 19;120(11):423–427.

Published In
Solid State Communications
DOI
ISSN
0038-1098
Publication Date
November 19, 2001
Volume
120
Issue
11
Start / End Page
423 / 427
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 3403 Macromolecular and materials chemistry
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics