Ballistic electrons in a submicron structure: The distribution function and two valley effects

We have solved the Boltzman equation for a submicron N+-N--N+ GaAs structure within a two-valley model using energy-dependent relaxation times. Ballistic electrons produce a large peak in the velocity-distribution function throughout much of the N- region. Transfer of electrons from the lower to upper valley in the N- layer causes an accumulation of charge near the collecting N+ region. Transfer of electrons back from the upper to the lower valley in the collecting N+ region creates two new peaks in the distribution function which we call ballistic electron echoes. © 1985.

Duke Scholars

Author Harold U. Baranger Physics