Selection rule for localized phonon emission in GaAs/AlAs double-barrier structures
Publication
, Journal Article
Turley, PJ; Wallis, CR; Teitsworth, SW
Published in: Journal of Applied Physics
January 1, 1995
Phonon-assisted tunneling (PAT) has been studied in detail for two similar GaAs/AlAs double-barrier structures. Calculations of the PAT current - including effects of optical-phonon localization - are in good agreement with experimental data, and the emission rate for certain phonon types is found to depend sensitively on GaAs well width. We find that GaAs-like modes clearly dominate in structures with wider wells, while GaAs and AlAs-like modes contribute equivalently in narrower well structures. A simple overlap integral - involving the phonon potential and electronic wave functions - provides an effective selection rule for determining which types of phonons are preferentially emitted. © 1995 American Institute of Physics.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 1995
Volume
78
Issue
10
Start / End Page
6104 / 6107
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Turley, P. J., Wallis, C. R., & Teitsworth, S. W. (1995). Selection rule for localized phonon emission in GaAs/AlAs double-barrier structures. Journal of Applied Physics, 78(10), 6104–6107. https://doi.org/10.1063/1.360551
Turley, P. J., C. R. Wallis, and S. W. Teitsworth. “Selection rule for localized phonon emission in GaAs/AlAs double-barrier structures.” Journal of Applied Physics 78, no. 10 (January 1, 1995): 6104–7. https://doi.org/10.1063/1.360551.
Turley PJ, Wallis CR, Teitsworth SW. Selection rule for localized phonon emission in GaAs/AlAs double-barrier structures. Journal of Applied Physics. 1995 Jan 1;78(10):6104–7.
Turley, P. J., et al. “Selection rule for localized phonon emission in GaAs/AlAs double-barrier structures.” Journal of Applied Physics, vol. 78, no. 10, Jan. 1995, pp. 6104–07. Scopus, doi:10.1063/1.360551.
Turley PJ, Wallis CR, Teitsworth SW. Selection rule for localized phonon emission in GaAs/AlAs double-barrier structures. Journal of Applied Physics. 1995 Jan 1;78(10):6104–6107.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 1995
Volume
78
Issue
10
Start / End Page
6104 / 6107
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences