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Theory of localized phonon modes and their effects on electron tunneling in double-barrier structures

Publication ,  Journal Article
Turley, PJ; Teitsworth, SW
Published in: Journal of Applied Physics
December 1, 1992

The role of localized phonon modes in phonon-assisted tunneling in GaAs/AlAs double-barrier resonant tunneling structures is considered for a range of temperatures and magnetic fields. Phonon modes are calculated using a dielectric continuum model and electron-phonon Hamiltonians are presented for the most important modes. Formulas for phonon-assisted tunneling currents are derived that express the inherently three-dimensional process in a simple one-dimensional form. It is found that the excess current due to phonon-assisted tunneling in typical structures is caused primarily by two types of localized modes: confined modes in the well and symmetric interface modes, with interface modes dominating in structures with narrow wells. Current peaks broaden with increasing temperature, and for temperatures ≳20 K the resolution of features due to distinct phonon types is very difficult. The application of a magnetic field parallel to the current flow leads to a complex spectrum of sharp current peaks corresponding to various inter-Landau-level transitions which occur during phonon-assisted tunneling.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1992

Volume

72

Issue

6

Start / End Page

2356 / 2366

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Turley, P. J., & Teitsworth, S. W. (1992). Theory of localized phonon modes and their effects on electron tunneling in double-barrier structures. Journal of Applied Physics, 72(6), 2356–2366. https://doi.org/10.1063/1.351577
Turley, P. J., and S. W. Teitsworth. “Theory of localized phonon modes and their effects on electron tunneling in double-barrier structures.” Journal of Applied Physics 72, no. 6 (December 1, 1992): 2356–66. https://doi.org/10.1063/1.351577.
Turley PJ, Teitsworth SW. Theory of localized phonon modes and their effects on electron tunneling in double-barrier structures. Journal of Applied Physics. 1992 Dec 1;72(6):2356–66.
Turley, P. J., and S. W. Teitsworth. “Theory of localized phonon modes and their effects on electron tunneling in double-barrier structures.” Journal of Applied Physics, vol. 72, no. 6, Dec. 1992, pp. 2356–66. Scopus, doi:10.1063/1.351577.
Turley PJ, Teitsworth SW. Theory of localized phonon modes and their effects on electron tunneling in double-barrier structures. Journal of Applied Physics. 1992 Dec 1;72(6):2356–2366.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1992

Volume

72

Issue

6

Start / End Page

2356 / 2366

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences