Structure of the electrical double layer in high-temperature superconductors. Origin of the dip in the double-layer capacitance near the superconducting transition
Publication
, Journal Article
Zusman, LD; Beratan, DN
Published in: Journal of Physical Chemistry B
September 4, 1997
A theory of the electrical double layer in high-temperature superconductors is developed in the context of a modified Ginzburg-Landau equation. Potential and excess charge distributions inside the electrode are computed. These distributions are shown to be characterized by a new fundamental length parameter. This length diverges when the electrode temperature approaches the superconducting critical temperature. The capacitance of the electrical double layer is found to be inversely proportional to this length. On the basis of this analysis, the origin of an experimentally observed dip in the double-layer capacitance is explained. The dependence of this capacitance dip on the external field is predicted.
Duke Scholars
Published In
Journal of Physical Chemistry B
DOI
ISSN
1520-6106
Publication Date
September 4, 1997
Volume
101
Issue
36
Start / End Page
7095 / 7099
Related Subject Headings
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Zusman, L. D., & Beratan, D. N. (1997). Structure of the electrical double layer in high-temperature superconductors. Origin of the dip in the double-layer capacitance near the superconducting transition. Journal of Physical Chemistry B, 101(36), 7095–7099. https://doi.org/10.1021/jp971026o
Zusman, L. D., and D. N. Beratan. “Structure of the electrical double layer in high-temperature superconductors. Origin of the dip in the double-layer capacitance near the superconducting transition.” Journal of Physical Chemistry B 101, no. 36 (September 4, 1997): 7095–99. https://doi.org/10.1021/jp971026o.
Zusman LD, Beratan DN. Structure of the electrical double layer in high-temperature superconductors. Origin of the dip in the double-layer capacitance near the superconducting transition. Journal of Physical Chemistry B. 1997 Sep 4;101(36):7095–9.
Zusman, L. D., and D. N. Beratan. “Structure of the electrical double layer in high-temperature superconductors. Origin of the dip in the double-layer capacitance near the superconducting transition.” Journal of Physical Chemistry B, vol. 101, no. 36, Sept. 1997, pp. 7095–99. Scopus, doi:10.1021/jp971026o.
Zusman LD, Beratan DN. Structure of the electrical double layer in high-temperature superconductors. Origin of the dip in the double-layer capacitance near the superconducting transition. Journal of Physical Chemistry B. 1997 Sep 4;101(36):7095–7099.
Published In
Journal of Physical Chemistry B
DOI
ISSN
1520-6106
Publication Date
September 4, 1997
Volume
101
Issue
36
Start / End Page
7095 / 7099
Related Subject Headings
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences