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A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process

Publication ,  Journal Article
Thomsen, A; Brooke, MA
Published in: Electron device letters
January 1, 1991

A floating-gate MOSFET which is programmable in both directions by Fowler-Nordheim tunneling and is fabricated using an inexpensive standard 2-μm double-polysilicon CMOS technology is discussed. Tunneling occurs at a crossover of polysilicon 1 with polysilicon 2. Device layout and basic device characteristics are presented, and recommendations for efficient programming are given. This is the first floating-gate FET with a tunneling injector fabricated in standard technology that has close to symmetric programming characteristics for both charging and discharging of the gate.

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Published In

Electron device letters

DOI

ISSN

0193-8576

Publication Date

January 1, 1991

Volume

12

Issue

3

Start / End Page

111 / 113
 

Citation

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Thomsen, A., & Brooke, M. A. (1991). A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process. Electron Device Letters, 12(3), 111–113. https://doi.org/10.1109/55.75728
Thomsen, A., and M. A. Brooke. “A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process.” Electron Device Letters 12, no. 3 (January 1, 1991): 111–13. https://doi.org/10.1109/55.75728.
Thomsen A, Brooke MA. A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process. Electron device letters. 1991 Jan 1;12(3):111–3.
Thomsen, A., and M. A. Brooke. “A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process.” Electron Device Letters, vol. 12, no. 3, Jan. 1991, pp. 111–13. Scopus, doi:10.1109/55.75728.
Thomsen A, Brooke MA. A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process. Electron device letters. 1991 Jan 1;12(3):111–113.

Published In

Electron device letters

DOI

ISSN

0193-8576

Publication Date

January 1, 1991

Volume

12

Issue

3

Start / End Page

111 / 113