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Low Control Voltage Programming of Floating Gate MOSFETs and Applications

Publication ,  Journal Article
Thomsen, A; Brooke, MA
Published in: IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications
January 1, 1994

Programming of EEPROM devices fabricated in standard processes often requires voltages that exceed the bulk-drain breakdown voltages of integrated circuits, making the full integration of the programming circuitry difficult. This paper presents a modified EEPROM device with two tunneling injectors that allows bidirectional, accurately controlled programming with voltages in the range of normal supply voltages. Additionally, two static voltages are required. This scheme allows full integration of the programming circuitry on chip. Applications in the areas of offset reduction for OPAMPs in clocked and continuous time systems as well as in neural network learning are presented. © 1994 IEEE

Duke Scholars

Published In

IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications

DOI

ISSN

1057-7122

Publication Date

January 1, 1994

Volume

41

Issue

6

Start / End Page

443 / 452

Related Subject Headings

  • Electrical & Electronic Engineering
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

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Thomsen, A., & Brooke, M. A. (1994). Low Control Voltage Programming of Floating Gate MOSFETs and Applications. IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 41(6), 443–452. https://doi.org/10.1109/81.295240
Thomsen, A., and M. A. Brooke. “Low Control Voltage Programming of Floating Gate MOSFETs and Applications.” IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 41, no. 6 (January 1, 1994): 443–52. https://doi.org/10.1109/81.295240.
Thomsen A, Brooke MA. Low Control Voltage Programming of Floating Gate MOSFETs and Applications. IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications. 1994 Jan 1;41(6):443–52.
Thomsen, A., and M. A. Brooke. “Low Control Voltage Programming of Floating Gate MOSFETs and Applications.” IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, vol. 41, no. 6, Jan. 1994, pp. 443–52. Scopus, doi:10.1109/81.295240.
Thomsen A, Brooke MA. Low Control Voltage Programming of Floating Gate MOSFETs and Applications. IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications. 1994 Jan 1;41(6):443–452.

Published In

IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications

DOI

ISSN

1057-7122

Publication Date

January 1, 1994

Volume

41

Issue

6

Start / End Page

443 / 452

Related Subject Headings

  • Electrical & Electronic Engineering
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering