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The influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs

Publication ,  Journal Article
Twyford, EJ; Carter, CA; Kohl, PA; Jokerst, NM
Published in: Applied Physics Letters
January 1, 1995
Published version (DOI)

We present a set of experiments which systematically clarifies the enhancement of photoelectrochemical (PEC) etching due to the mole fraction of aluminum in AlxGa1-xAs. The spatial resolution of gratings etched in Al0.3Ga0.7As is as much as three times greater than the spatial resolution of gratings etched in GaAs, so that the smallest practical grating period is about 0.3 μm, as compared with about 0.7 μm using previous techniques. This technique enabled PEC fabrication of first order gratings for waveguide outcouplers. The lower hole mobility of Al xGa1-xAs is proposed as a possible explanation for this grating resolution improvement.© 1995 American Institute of Physics.

Duke Scholars

Nan Marie Jokerst
Author Nan Marie Jokerst Electrical and Computer Engineering
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Published In

Applied Physics Letters

DOI

10.1063/1.115000

ISSN

0003-6951

Publication Date

January 1, 1995

Volume

67

Start / End Page

1182

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Twyford, E. J., Carter, C. A., Kohl, P. A., & Jokerst, N. M. (1995). The influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs. Applied Physics Letters, 67, 1182. https://doi.org/10.1063/1.115000
Twyford, E. J., C. A. Carter, P. A. Kohl, and N. M. Jokerst. “The influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs.” Applied Physics Letters 67 (January 1, 1995): 1182. https://doi.org/10.1063/1.115000.
Twyford EJ, Carter CA, Kohl PA, Jokerst NM. The influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs. Applied Physics Letters. 1995 Jan 1;67:1182.
Twyford, E. J., et al. “The influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs.” Applied Physics Letters, vol. 67, Jan. 1995, p. 1182. Scopus, doi:10.1063/1.115000.
Twyford EJ, Carter CA, Kohl PA, Jokerst NM. The influence of aluminum concentration on photoelectrochemical etching of first order gratings in GaAs/AlGaAs. Applied Physics Letters. 1995 Jan 1;67:1182.

Published In

Applied Physics Letters

DOI

10.1063/1.115000

ISSN

0003-6951

Publication Date

January 1, 1995

Volume

67

Start / End Page

1182

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences