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Vertical Electrical Interconnection of Compound Semiconductor Thin-Film Devices to Underlying Silicon Circuitry

Publication ,  Journal Article
Camperi-Ginestet, C; Kim, YW; Jokerst, NM; Allen, MG; Brooke, MA
Published in: IEEE Photonics Technology Letters
January 1, 1992
Published version (DOI)

A three-dimensional integration technology that electrically connects an independently optimized thin-film device layer to a Si circuitry layer is reported in this paper. An epitaxial liftoff GaAs thin-film optical detector is integrated directly on top of Si amplifier circuitry with a planarizing, insulating layer of polyimide between the detector and the circuitry. The detector is vertically connected to the circuitry below through an electrical via in the insulator. This integration technology enables monolithic, massively parallel vertical interconnection between two independently optimized device layers. Systems such as image processing arrays will significantly bene- fit from this massively parallel integration technology. © 1992 IEEE

Duke Scholars

Nan Marie Jokerst
Author Nan Marie Jokerst Electrical and Computer Engineering
Martin A. Brooke
Author Martin A. Brooke Electrical and Computer Engineering
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Published In

IEEE Photonics Technology Letters

DOI

10.1109/68.157129

EISSN

1941-0174

ISSN

1041-1135

Publication Date

January 1, 1992

Volume

4

Issue

9

Start / End Page

1003 / 1006

Related Subject Headings

  • Optoelectronics & Photonics
  • 5102 Atomic, molecular and optical physics
  • 4006 Communications engineering
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics
 

Citation

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Camperi-Ginestet, C., Kim, Y. W., Jokerst, N. M., Allen, M. G., & Brooke, M. A. (1992). Vertical Electrical Interconnection of Compound Semiconductor Thin-Film Devices to Underlying Silicon Circuitry. IEEE Photonics Technology Letters, 4(9), 1003–1006. https://doi.org/10.1109/68.157129
Camperi-Ginestet, C., Y. W. Kim, N. M. Jokerst, M. G. Allen, and M. A. Brooke. “Vertical Electrical Interconnection of Compound Semiconductor Thin-Film Devices to Underlying Silicon Circuitry.” IEEE Photonics Technology Letters 4, no. 9 (January 1, 1992): 1003–6. https://doi.org/10.1109/68.157129.
Camperi-Ginestet C, Kim YW, Jokerst NM, Allen MG, Brooke MA. Vertical Electrical Interconnection of Compound Semiconductor Thin-Film Devices to Underlying Silicon Circuitry. IEEE Photonics Technology Letters. 1992 Jan 1;4(9):1003–6.
Camperi-Ginestet, C., et al. “Vertical Electrical Interconnection of Compound Semiconductor Thin-Film Devices to Underlying Silicon Circuitry.” IEEE Photonics Technology Letters, vol. 4, no. 9, Jan. 1992, pp. 1003–06. Scopus, doi:10.1109/68.157129.
Camperi-Ginestet C, Kim YW, Jokerst NM, Allen MG, Brooke MA. Vertical Electrical Interconnection of Compound Semiconductor Thin-Film Devices to Underlying Silicon Circuitry. IEEE Photonics Technology Letters. 1992 Jan 1;4(9):1003–1006.

Published In

IEEE Photonics Technology Letters

DOI

10.1109/68.157129

EISSN

1941-0174

ISSN

1041-1135

Publication Date

January 1, 1992

Volume

4

Issue

9

Start / End Page

1003 / 1006

Related Subject Headings

  • Optoelectronics & Photonics
  • 5102 Atomic, molecular and optical physics
  • 4006 Communications engineering
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics