Direct measurement of near-band-gap electrorefraction in Al 0.3 Ga0.7 As/GaAs/Al0.3 Ga0.7 As thin-film structures
Publication
, Journal Article
Calhoun, KH; Jokerst, NM
Published in: Applied Physics Letters
December 1, 1993
We report the first direct measurement of near-band-gap Franz-Keldysh electrorefraction in Al0.3Ga0.7As/GaAs/Al 0.3Ga0.7As p-i-n single-crystal thin-film Fabry-Perot structures with semitransparent metallic mirror contacts. These measurements are performed for various reverse biases and at photon energies ranging from 9 to less than 1 meV from the GaAs band edge. The measured refractive index variation is several times larger than that predicted by the effective mass approximation theory.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
21
Start / End Page
2673 / 2675
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
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Calhoun, K. H., & Jokerst, N. M. (1993). Direct measurement of near-band-gap electrorefraction in Al 0.3 Ga0.7 As/GaAs/Al0.3 Ga0.7 As thin-film structures. Applied Physics Letters, 62(21), 2673–2675. https://doi.org/10.1063/1.109281
Calhoun, K. H., and N. M. Jokerst. “Direct measurement of near-band-gap electrorefraction in Al 0.3 Ga0.7 As/GaAs/Al0.3 Ga0.7 As thin-film structures.” Applied Physics Letters 62, no. 21 (December 1, 1993): 2673–75. https://doi.org/10.1063/1.109281.
Calhoun KH, Jokerst NM. Direct measurement of near-band-gap electrorefraction in Al 0.3 Ga0.7 As/GaAs/Al0.3 Ga0.7 As thin-film structures. Applied Physics Letters. 1993 Dec 1;62(21):2673–5.
Calhoun, K. H., and N. M. Jokerst. “Direct measurement of near-band-gap electrorefraction in Al 0.3 Ga0.7 As/GaAs/Al0.3 Ga0.7 As thin-film structures.” Applied Physics Letters, vol. 62, no. 21, Dec. 1993, pp. 2673–75. Scopus, doi:10.1063/1.109281.
Calhoun KH, Jokerst NM. Direct measurement of near-band-gap electrorefraction in Al 0.3 Ga0.7 As/GaAs/Al0.3 Ga0.7 As thin-film structures. Applied Physics Letters. 1993 Dec 1;62(21):2673–2675.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
21
Start / End Page
2673 / 2675
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences