Epitaxial Lift-Off GaAs/AlGaAs Metal-Semiconductor-Metal Photodetectors with Back Passivation
Publication
, Journal Article
Hargis, MC; Carnahan, RE; Brown, JS; Jokerst, NM
Published in: IEEE Photonics Technology Letters
January 1, 1993
High-performance thin-film epitaxial lift-off (ELO) photodetectors have potential for integration with independently optimized integrated circuits and waveguides. In this paper, the dark current, responsivity, and frequency response of GaAs/AlGaAs metal-semiconductor-metal (MSM) photodetectors that remain on the growth substrate are compared to ELO detectors with and without back passivation. The passivated ELO detectors perform comparably to the on-wafer devices, while the unpassivated devices exhibit performance degradation. In addition to demonstrating the importance of back passivation, this paper presents the lowest ELO MSM dark current (5 nA at 5 V) for a 200-pm-diameter device published to date. © 1993 IEEE
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Published In
IEEE Photonics Technology Letters
DOI
EISSN
1941-0174
ISSN
1041-1135
Publication Date
January 1, 1993
Volume
5
Issue
10
Start / End Page
1210 / 1212
Related Subject Headings
- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4006 Communications engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
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Hargis, M. C., Carnahan, R. E., Brown, J. S., & Jokerst, N. M. (1993). Epitaxial Lift-Off GaAs/AlGaAs Metal-Semiconductor-Metal Photodetectors with Back Passivation. IEEE Photonics Technology Letters, 5(10), 1210–1212. https://doi.org/10.1109/68.248430
Hargis, M. C., R. E. Carnahan, J. S. Brown, and N. M. Jokerst. “Epitaxial Lift-Off GaAs/AlGaAs Metal-Semiconductor-Metal Photodetectors with Back Passivation.” IEEE Photonics Technology Letters 5, no. 10 (January 1, 1993): 1210–12. https://doi.org/10.1109/68.248430.
Hargis MC, Carnahan RE, Brown JS, Jokerst NM. Epitaxial Lift-Off GaAs/AlGaAs Metal-Semiconductor-Metal Photodetectors with Back Passivation. IEEE Photonics Technology Letters. 1993 Jan 1;5(10):1210–2.
Hargis, M. C., et al. “Epitaxial Lift-Off GaAs/AlGaAs Metal-Semiconductor-Metal Photodetectors with Back Passivation.” IEEE Photonics Technology Letters, vol. 5, no. 10, Jan. 1993, pp. 1210–12. Scopus, doi:10.1109/68.248430.
Hargis MC, Carnahan RE, Brown JS, Jokerst NM. Epitaxial Lift-Off GaAs/AlGaAs Metal-Semiconductor-Metal Photodetectors with Back Passivation. IEEE Photonics Technology Letters. 1993 Jan 1;5(10):1210–1212.
Published In
IEEE Photonics Technology Letters
DOI
EISSN
1941-0174
ISSN
1041-1135
Publication Date
January 1, 1993
Volume
5
Issue
10
Start / End Page
1210 / 1212
Related Subject Headings
- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4006 Communications engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics