Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
Publication
, Journal Article
Stewart, K; Buda, M; Wong-Leung, J; Fu, L; Jagadish, C; Stiff-Roberts, A; Bhattacharya, P
Published in: Journal of Applied Physics
October 15, 2003
Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
October 15, 2003
Volume
94
Issue
8
Start / End Page
5283 / 5289
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Stewart, K., Buda, M., Wong-Leung, J., Fu, L., Jagadish, C., Stiff-Roberts, A., & Bhattacharya, P. (2003). Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector. Journal of Applied Physics, 94(8), 5283–5289. https://doi.org/10.1063/1.1609634
Stewart, K., M. Buda, J. Wong-Leung, L. Fu, C. Jagadish, A. Stiff-Roberts, and P. Bhattacharya. “Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector.” Journal of Applied Physics 94, no. 8 (October 15, 2003): 5283–89. https://doi.org/10.1063/1.1609634.
Stewart K, Buda M, Wong-Leung J, Fu L, Jagadish C, Stiff-Roberts A, et al. Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector. Journal of Applied Physics. 2003 Oct 15;94(8):5283–9.
Stewart, K., et al. “Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector.” Journal of Applied Physics, vol. 94, no. 8, Oct. 2003, pp. 5283–89. Scopus, doi:10.1063/1.1609634.
Stewart K, Buda M, Wong-Leung J, Fu L, Jagadish C, Stiff-Roberts A, Bhattacharya P. Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector. Journal of Applied Physics. 2003 Oct 15;94(8):5283–5289.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
October 15, 2003
Volume
94
Issue
8
Start / End Page
5283 / 5289
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences