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High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector

Publication ,  Journal Article
Stiff-Roberts, AD; Chakrabarti, S; Kennerly, S; Bhattacharya, P
Published in: OSA Trends in Optics and Photonics Series
January 1, 2003

The material characteristics of 70-layer quandom dot infrared photodetector (QDIP) was investigated using transmission electron microscopy and photoluminescence measurements. QDIP comprises of InAs/GaAs quantum dots, which offers nornal incidence, low dark current, high temperature, multi-wavelength detection useful for environmental monitoring, medical diagnosis and space science. It improves reponsivity and conversion efficiency and can also be used for polarization sensitive detection. The influence of the background can be eliminated by considering both in-plane polarized and perpendicularly polarized detection.

Duke Scholars

Published In

OSA Trends in Optics and Photonics Series

ISSN

1094-5695

Publication Date

January 1, 2003

Volume

88

Start / End Page

464 / 466
 

Citation

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MLA
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Stiff-Roberts, A. D., Chakrabarti, S., Kennerly, S., & Bhattacharya, P. (2003). High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector. OSA Trends in Optics and Photonics Series, 88, 464–466.
Stiff-Roberts, A. D., S. Chakrabarti, S. Kennerly, and P. Bhattacharya. “High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector.” OSA Trends in Optics and Photonics Series 88 (January 1, 2003): 464–66.
Stiff-Roberts AD, Chakrabarti S, Kennerly S, Bhattacharya P. High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector. OSA Trends in Optics and Photonics Series. 2003 Jan 1;88:464–6.
Stiff-Roberts, A. D., et al. “High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector.” OSA Trends in Optics and Photonics Series, vol. 88, Jan. 2003, pp. 464–66.
Stiff-Roberts AD, Chakrabarti S, Kennerly S, Bhattacharya P. High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector. OSA Trends in Optics and Photonics Series. 2003 Jan 1;88:464–466.

Published In

OSA Trends in Optics and Photonics Series

ISSN

1094-5695

Publication Date

January 1, 2003

Volume

88

Start / End Page

464 / 466