Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors
Quantum-dot infrared photodetectors (QDIPs) are being studied extensively for mid-wavelength and long-wavelength infrared detection because they offer normal-incidence, high-temperature, multispectral operation. Intersubband absorption, carrier lifetime, and gain are parameters that need to be better characterized, understood, and controlled in order to realize high-performance QDIPs. An eight-band k · p model is used to calculate polarization-dependent intersubband absorption. The calculated trend in absorption has been compared with measured data. In addition, a Monte-Carlo simulation is used to calculate the effective carrier lifetime in detectors, allowing the calculation of gain in QDIPs as a function of bias. The calculated gain values can be fitted well with experimental data, revealing that the gain in these devices consists of two mechanisms: Photoconductive gain and avalanche gain, where the latter is less dominant at normal operating biases.
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Related Subject Headings
- Optoelectronics & Photonics
- 5108 Quantum physics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
Citation
Published In
DOI
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Optoelectronics & Photonics
- 5108 Quantum physics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics