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Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector

Publication ,  Journal Article
Stiff, AD; Krishna, S; Bhattacharya, P; Kennerly, SW
Published in: IEEE Journal of Quantum Electronics
November 1, 2001
Published version (DOI)

The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs - GaAs vertical quantum-dot infrared photodetector with a single Al0.3Ga0.7As current-blocking barrier are described and discussed in detail. A specific detectivity 3 × 109 cmHz1/2/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array.

Duke Scholars

Adrienne Stiff-Roberts
Author Adrienne Stiff-Roberts Electrical and Computer Engineering

Published In

IEEE Journal of Quantum Electronics

DOI

10.1109/3.958360

ISSN

0018-9197

Publication Date

November 1, 2001

Volume

37

Issue

11

Start / End Page

1412 / 1419

Related Subject Headings

  • Optoelectronics & Photonics
  • 5108 Quantum physics
  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 0912 Materials Engineering
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Stiff, A. D., Krishna, S., Bhattacharya, P., & Kennerly, S. W. (2001). Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector. IEEE Journal of Quantum Electronics, 37(11), 1412–1419. https://doi.org/10.1109/3.958360
Stiff, A. D., S. Krishna, P. Bhattacharya, and S. W. Kennerly. “Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector.” IEEE Journal of Quantum Electronics 37, no. 11 (November 1, 2001): 1412–19. https://doi.org/10.1109/3.958360.
Stiff AD, Krishna S, Bhattacharya P, Kennerly SW. Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector. IEEE Journal of Quantum Electronics. 2001 Nov 1;37(11):1412–9.
Stiff, A. D., et al. “Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector.” IEEE Journal of Quantum Electronics, vol. 37, no. 11, Nov. 2001, pp. 1412–19. Scopus, doi:10.1109/3.958360.
Stiff AD, Krishna S, Bhattacharya P, Kennerly SW. Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector. IEEE Journal of Quantum Electronics. 2001 Nov 1;37(11):1412–1419.

Published In

IEEE Journal of Quantum Electronics

DOI

10.1109/3.958360

ISSN

0018-9197

Publication Date

November 1, 2001

Volume

37

Issue

11

Start / End Page

1412 / 1419

Related Subject Headings

  • Optoelectronics & Photonics
  • 5108 Quantum physics
  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 0912 Materials Engineering
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics