Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector
Publication
, Journal Article
Stiff, AD; Krishna, S; Bhattacharya, P; Kennerly, SW
Published in: IEEE Journal of Quantum Electronics
November 1, 2001
The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs - GaAs vertical quantum-dot infrared photodetector with a single Al0.3Ga0.7As current-blocking barrier are described and discussed in detail. A specific detectivity 3 × 109 cmHz1/2/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array.
Duke Scholars
Published In
IEEE Journal of Quantum Electronics
DOI
ISSN
0018-9197
Publication Date
November 1, 2001
Volume
37
Issue
11
Start / End Page
1412 / 1419
Related Subject Headings
- Optoelectronics & Photonics
- 5108 Quantum physics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Stiff, A. D., Krishna, S., Bhattacharya, P., & Kennerly, S. W. (2001). Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector. IEEE Journal of Quantum Electronics, 37(11), 1412–1419. https://doi.org/10.1109/3.958360
Stiff, A. D., S. Krishna, P. Bhattacharya, and S. W. Kennerly. “Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector.” IEEE Journal of Quantum Electronics 37, no. 11 (November 1, 2001): 1412–19. https://doi.org/10.1109/3.958360.
Stiff AD, Krishna S, Bhattacharya P, Kennerly SW. Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector. IEEE Journal of Quantum Electronics. 2001 Nov 1;37(11):1412–9.
Stiff, A. D., et al. “Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector.” IEEE Journal of Quantum Electronics, vol. 37, no. 11, Nov. 2001, pp. 1412–19. Scopus, doi:10.1109/3.958360.
Stiff AD, Krishna S, Bhattacharya P, Kennerly SW. Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector. IEEE Journal of Quantum Electronics. 2001 Nov 1;37(11):1412–1419.
Published In
IEEE Journal of Quantum Electronics
DOI
ISSN
0018-9197
Publication Date
November 1, 2001
Volume
37
Issue
11
Start / End Page
1412 / 1419
Related Subject Headings
- Optoelectronics & Photonics
- 5108 Quantum physics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics