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Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates

Publication ,  Journal Article
Kong, HS; Glass, JT; Davis, RF
Published in: Journal of Applied Physics
December 1, 1988

High-quality, monocrystalline 6H-SiC thin films have been epitaxially grown on 6H-SiC {0001} substrates which were prepared 3°off-axis from 〈0001〉 towards 〈112̄0〉 at 1773 K via chemical vapor deposition (CVD). Essentially, no defects were generated from the epilayer/substrate interface as determined by cross-sectional transmission electron microscopy (XTEM). Double positioning boundaries which were observed in β-SiC grown on 6H-SiC substrates were eliminated as confirmed by plan-view TEM. A strong dependence of the surface morphology of the as-grown thin films on the tilting orientation of the substrates was observed and reasons for this phenomenon are discussed. The unintentionally doped 6H-SiC thin films always exhibit n-type conduction with a carrier concentration on the order of 10 16 cm-3. Au-6H-SiC Schottky barrier diodes were fabricated on the CVD 6H-SiC thin films and it was found that the leakage current at a reverse bias of 55 V was only 3.2×10-5 A/cm2. This is compared to SiC films grown on other substrates.

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Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1988

Volume

64

Issue

5

Start / End Page

2672 / 2679

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Kong, H. S., Glass, J. T., & Davis, R. F. (1988). Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates. Journal of Applied Physics, 64(5), 2672–2679. https://doi.org/10.1063/1.341608
Kong, H. S., J. T. Glass, and R. F. Davis. “Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates.” Journal of Applied Physics 64, no. 5 (December 1, 1988): 2672–79. https://doi.org/10.1063/1.341608.
Kong HS, Glass JT, Davis RF. Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates. Journal of Applied Physics. 1988 Dec 1;64(5):2672–9.
Kong, H. S., et al. “Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates.” Journal of Applied Physics, vol. 64, no. 5, Dec. 1988, pp. 2672–79. Scopus, doi:10.1063/1.341608.
Kong HS, Glass JT, Davis RF. Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates. Journal of Applied Physics. 1988 Dec 1;64(5):2672–2679.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1988

Volume

64

Issue

5

Start / End Page

2672 / 2679

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences