Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films
Publication
, Journal Article
Kim, HJ; Kong, H; Edmond, JA; Ryu, J; Palmour, J; Jr, CCH; Glass, JT; Davis, RF
Published in: J. Vac. Sci. Technol. A, Vac. Surf. Films (USA)
1988
Summary form only given. The authors discuss growth of epitaxial films of β-SiC on high resistivity substrates, using chemical vapour deposition. They study the defects and effects of doping, and manufacture Schottky diodes
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Published In
J. Vac. Sci. Technol. A, Vac. Surf. Films (USA)
DOI
Publication Date
1988
Volume
6
Issue
3
Start / End Page
1954 / 1956
Location
Anaheim, CA, USA
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
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Kim, H. J., Kong, H., Edmond, J. A., Ryu, J., Palmour, J., Jr, C. C. H., … Davis, R. F. (1988). Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films. J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), 6(3), 1954–1956. https://doi.org/10.1116/1.575214
Kim, H. J., H. Kong, J. A. Edmond, J. Ryu, J. Palmour, Carter C. H. Jr, J. T. Glass, and R. F. Davis. “Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films.” J. Vac. Sci. Technol. A, Vac. Surf. Films (USA) 6, no. 3 (1988): 1954–56. https://doi.org/10.1116/1.575214.
Kim HJ, Kong H, Edmond JA, Ryu J, Palmour J, Jr CCH, et al. Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films. J Vac Sci Technol A, Vac Surf Films (USA). 1988;6(3):1954–6.
Kim, H. J., et al. “Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films.” J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), vol. 6, no. 3, 1988, pp. 1954–56. Manual, doi:10.1116/1.575214.
Kim HJ, Kong H, Edmond JA, Ryu J, Palmour J, Jr CCH, Glass JT, Davis RF. Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films. J Vac Sci Technol A, Vac Surf Films (USA). 1988;6(3):1954–1956.
Published In
J. Vac. Sci. Technol. A, Vac. Surf. Films (USA)
DOI
Publication Date
1988
Volume
6
Issue
3
Start / End Page
1954 / 1956
Location
Anaheim, CA, USA
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences