Structural and chemical characterization of diamond films and diamond-substrate interfaces

Summary form only given. Diamond thin films grown by microwave plasma enhanced chemical vapor deposition (MPECVD) were characterized by a variety of materials analysis techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IRS), and secondary ion mass spectroscopy (SIMS). Composition, bonding, and structure all verify that a true diamond phase is present. The morphology of the diamond film has also been examined. A polycrystalline grain structure with preferred growth facets dependent on methane concentration during growth was observed. Defects in the films, including numerous twin and stacking faults as well as dislocations, were identified via TEM and SAD

Duke Scholars

Author Jeffrey Glass Electrical and Computer Engineering