Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy
Publication
, Journal Article
Zhao, ZY; Yi, C; Stiff-Roberts, AD; Hoffman, AJ; Wasserman, D; Gmachl, C
Published in: Infrared Physics and Technology
October 1, 2007
In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs. © 2007 Elsevier B.V. All rights reserved.
Duke Scholars
Published In
Infrared Physics and Technology
DOI
ISSN
1350-4495
Publication Date
October 1, 2007
Volume
51
Issue
2
Start / End Page
131 / 135
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 5102 Atomic, molecular and optical physics
- 0915 Interdisciplinary Engineering
- 0205 Optical Physics
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Zhao, Z. Y., Yi, C., Stiff-Roberts, A. D., Hoffman, A. J., Wasserman, D., & Gmachl, C. (2007). Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy. Infrared Physics and Technology, 51(2), 131–135. https://doi.org/10.1016/j.infrared.2007.04.002
Zhao, Z. Y., C. Yi, A. D. Stiff-Roberts, A. J. Hoffman, D. Wasserman, and C. Gmachl. “Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy.” Infrared Physics and Technology 51, no. 2 (October 1, 2007): 131–35. https://doi.org/10.1016/j.infrared.2007.04.002.
Zhao ZY, Yi C, Stiff-Roberts AD, Hoffman AJ, Wasserman D, Gmachl C. Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy. Infrared Physics and Technology. 2007 Oct 1;51(2):131–5.
Zhao, Z. Y., et al. “Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy.” Infrared Physics and Technology, vol. 51, no. 2, Oct. 2007, pp. 131–35. Scopus, doi:10.1016/j.infrared.2007.04.002.
Zhao ZY, Yi C, Stiff-Roberts AD, Hoffman AJ, Wasserman D, Gmachl C. Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy. Infrared Physics and Technology. 2007 Oct 1;51(2):131–135.
Published In
Infrared Physics and Technology
DOI
ISSN
1350-4495
Publication Date
October 1, 2007
Volume
51
Issue
2
Start / End Page
131 / 135
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 5102 Atomic, molecular and optical physics
- 0915 Interdisciplinary Engineering
- 0205 Optical Physics
- 0204 Condensed Matter Physics