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Dependence of electric field domain relocation dynamics on contact conductivity in semiconductor superlattices

Publication ,  Journal Article
Xu, H; Teitsworth, SW
Published in: Physical Review B - Condensed Matter and Materials Physics
December 3, 2007

Numerical simulation results are presented for a discrete drift-diffusion rate equation model that describes electronic transport due to sequential tunneling between adjacent quantum wells in weakly coupled semiconductor superlattices. We study the dependence on contact conductivity σ of current-voltage characteristics and transient current response to abrupt steps in applied voltage. For intermediate values of σ, three qualitatively distinct transient responses-each associated with a different mechanism for the relocation of a static charge accumulation layer-are observed for different values of voltage step Vstep; these involve, respectively, (1) the motion of a single charge accumulation layer, (2) the motion of an injected charge dipole, and (3) the motion of an injected monopole. A critical value of σ is identified above which the injected dipole mechanism is not observed for any value of Vstep. Furthermore, at very low σ, we find a reversed static field configuration, i.e., with the high-field domain adjacent to the emitter contact. © 2007 The American Physical Society.

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Published In

Physical Review B - Condensed Matter and Materials Physics

DOI

EISSN

1550-235X

ISSN

1098-0121

Publication Date

December 3, 2007

Volume

76

Issue

23

Related Subject Headings

  • Fluids & Plasmas
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences
 

Citation

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Xu, H., & Teitsworth, S. W. (2007). Dependence of electric field domain relocation dynamics on contact conductivity in semiconductor superlattices. Physical Review B - Condensed Matter and Materials Physics, 76(23). https://doi.org/10.1103/PhysRevB.76.235302
Xu, H., and S. W. Teitsworth. “Dependence of electric field domain relocation dynamics on contact conductivity in semiconductor superlattices.” Physical Review B - Condensed Matter and Materials Physics 76, no. 23 (December 3, 2007). https://doi.org/10.1103/PhysRevB.76.235302.
Xu H, Teitsworth SW. Dependence of electric field domain relocation dynamics on contact conductivity in semiconductor superlattices. Physical Review B - Condensed Matter and Materials Physics. 2007 Dec 3;76(23).
Xu, H., and S. W. Teitsworth. “Dependence of electric field domain relocation dynamics on contact conductivity in semiconductor superlattices.” Physical Review B - Condensed Matter and Materials Physics, vol. 76, no. 23, Dec. 2007. Scopus, doi:10.1103/PhysRevB.76.235302.
Xu H, Teitsworth SW. Dependence of electric field domain relocation dynamics on contact conductivity in semiconductor superlattices. Physical Review B - Condensed Matter and Materials Physics. 2007 Dec 3;76(23).

Published In

Physical Review B - Condensed Matter and Materials Physics

DOI

EISSN

1550-235X

ISSN

1098-0121

Publication Date

December 3, 2007

Volume

76

Issue

23

Related Subject Headings

  • Fluids & Plasmas
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences