Contact geometry and conductance of crossed nanotube junctions under pressure.
Publication
, Journal Article
Bulat, FA; Couchman, L; Yang, W
Published in: Nano letters
May 2009
We explored the relative stability, structure, and conductance of crossed nanotube junctions with dispersion corrected density functional theory. We found that the most stable junction geometry, not studied before, displays the smallest conductance. While the conductance increases as force is applied, it levels off very rapidly. This behavior contrasts with a less stable junction geometry that show steady increase of the conductance as force is applied. Electromechanical sensing devices based on this effect should exploit the conductance changes close to equilibrium.
Duke Scholars
Published In
Nano letters
DOI
EISSN
1530-6992
ISSN
1530-6984
Publication Date
May 2009
Volume
9
Issue
5
Start / End Page
1759 / 1763
Related Subject Headings
- Nanoscience & Nanotechnology
Citation
APA
Chicago
ICMJE
MLA
NLM
Bulat, F. A., Couchman, L., & Yang, W. (2009). Contact geometry and conductance of crossed nanotube junctions under pressure. Nano Letters, 9(5), 1759–1763. https://doi.org/10.1021/nl803388m
Bulat, Felipe A., Luise Couchman, and Weitao Yang. “Contact geometry and conductance of crossed nanotube junctions under pressure.” Nano Letters 9, no. 5 (May 2009): 1759–63. https://doi.org/10.1021/nl803388m.
Bulat FA, Couchman L, Yang W. Contact geometry and conductance of crossed nanotube junctions under pressure. Nano letters. 2009 May;9(5):1759–63.
Bulat, Felipe A., et al. “Contact geometry and conductance of crossed nanotube junctions under pressure.” Nano Letters, vol. 9, no. 5, May 2009, pp. 1759–63. Epmc, doi:10.1021/nl803388m.
Bulat FA, Couchman L, Yang W. Contact geometry and conductance of crossed nanotube junctions under pressure. Nano letters. 2009 May;9(5):1759–1763.
Published In
Nano letters
DOI
EISSN
1530-6992
ISSN
1530-6984
Publication Date
May 2009
Volume
9
Issue
5
Start / End Page
1759 / 1763
Related Subject Headings
- Nanoscience & Nanotechnology