On the possibility of a shunt-stabilized superlattice THz emitter
Publication
, Journal Article
Xu, H; Teitsworth, SW
Published in: Applied Physics Letters
2010
High field electronic transport through a strongly-coupled superlattice (SL) with a shunting side layer is numerically studied using a novel drift-diffusion model. The bias voltage corresponds to an average electric field in the negative differential conductivity (NDC) region of the intrinsic current-field (I ¡ F) curve of the SL, a condition that generally implies space charge instability. Key structural parameters associated with both the shunt layer and SL are identified for which the shunt layer stabilizes a uniform electric field profile. These results support the possibility to realize a SL-based THz oscillator with a carefully designed structure.
Duke Scholars
Published In
Applied Physics Letters
Publication Date
2010
Volume
96
Issue
022101
Start / End Page
3 pages
Related Subject Headings
- Applied Physics
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Xu, H., & Teitsworth, S. W. (2010). On the possibility of a shunt-stabilized superlattice THz emitter. Applied Physics Letters, 96(022101), 3pages.
Xu, H., and S. W. Teitsworth. “On the possibility of a shunt-stabilized superlattice THz emitter.” Applied Physics Letters 96, no. 022101 (2010): 3pages.
Xu H, Teitsworth SW. On the possibility of a shunt-stabilized superlattice THz emitter. Applied Physics Letters. 2010;96(022101):3pages.
Xu, H., and S. W. Teitsworth. “On the possibility of a shunt-stabilized superlattice THz emitter.” Applied Physics Letters, vol. 96, no. 022101, 2010, p. 3pages.
Xu H, Teitsworth SW. On the possibility of a shunt-stabilized superlattice THz emitter. Applied Physics Letters. 2010;96(022101):3pages.
Published In
Applied Physics Letters
Publication Date
2010
Volume
96
Issue
022101
Start / End Page
3 pages
Related Subject Headings
- Applied Physics
- 10 Technology
- 09 Engineering
- 02 Physical Sciences