EPITAXIAL-GROWTH, DOPING AND ANALYTICAL CHARACTERIZATION OF MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS
Publication
, Journal Article
Davis, RF; Kim, HJ; Kong, H; Edmond, JA; Glass, JT
Published in: Journal of Electronic Materials
July 1987
Duke Scholars
Published In
Journal of Electronic Materials
ISSN
0361-5235
Publication Date
July 1987
Volume
16
Issue
4
Start / End Page
A23 / A23
Related Subject Headings
- Applied Physics
- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Davis, R. F., Kim, H. J., Kong, H., Edmond, J. A., & Glass, J. T. (1987). EPITAXIAL-GROWTH, DOPING AND ANALYTICAL CHARACTERIZATION OF MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS. Journal of Electronic Materials, 16(4), A23–A23.
Davis, R. F., H. J. Kim, H. Kong, J. A. Edmond, and J. T. Glass. “EPITAXIAL-GROWTH, DOPING AND ANALYTICAL CHARACTERIZATION OF MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS.” Journal of Electronic Materials 16, no. 4 (July 1987): A23–A23.
Davis RF, Kim HJ, Kong H, Edmond JA, Glass JT. EPITAXIAL-GROWTH, DOPING AND ANALYTICAL CHARACTERIZATION OF MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS. Journal of Electronic Materials. 1987 Jul;16(4):A23–A23.
Davis, R. F., et al. “EPITAXIAL-GROWTH, DOPING AND ANALYTICAL CHARACTERIZATION OF MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS.” Journal of Electronic Materials, vol. 16, no. 4, July 1987, pp. A23–A23.
Davis RF, Kim HJ, Kong H, Edmond JA, Glass JT. EPITAXIAL-GROWTH, DOPING AND ANALYTICAL CHARACTERIZATION OF MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS. Journal of Electronic Materials. 1987 Jul;16(4):A23–A23.
Published In
Journal of Electronic Materials
ISSN
0361-5235
Publication Date
July 1987
Volume
16
Issue
4
Start / End Page
A23 / A23
Related Subject Headings
- Applied Physics
- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics