Design, fabrication, and test of a 125Mb/s transimpedance amplifier using MOSIS 1.2μm standard digital CMOS process
Publication
, Journal Article
Lee, M; Brooke, MA
Published in: Midwest Symposium on Circuits and Systems
December 1, 1994
A front-end transimpedance amplifier for an optical receiver is designed, fabricated through MOSIS 1.2μm digital CMOS foundry, and tested. The amplifier meets the specification of FDDI physical layer. Test shows that the bandwidth of the circuit is more than 100MHz and overall transimpedance gain is about 10,000Ω with 50Ω load resistor. Power dissipation is about 20mW.
Duke Scholars
Published In
Midwest Symposium on Circuits and Systems
Publication Date
December 1, 1994
Volume
1
Start / End Page
155 / 157
Citation
APA
Chicago
ICMJE
MLA
NLM
Lee, M., & Brooke, M. A. (1994). Design, fabrication, and test of a 125Mb/s transimpedance amplifier using MOSIS 1.2μm standard digital CMOS process. Midwest Symposium on Circuits and Systems, 1, 155–157.
Lee, M., and M. A. Brooke. “Design, fabrication, and test of a 125Mb/s transimpedance amplifier using MOSIS 1.2μm standard digital CMOS process.” Midwest Symposium on Circuits and Systems 1 (December 1, 1994): 155–57.
Lee M, Brooke MA. Design, fabrication, and test of a 125Mb/s transimpedance amplifier using MOSIS 1.2μm standard digital CMOS process. Midwest Symposium on Circuits and Systems. 1994 Dec 1;1:155–7.
Lee, M., and M. A. Brooke. “Design, fabrication, and test of a 125Mb/s transimpedance amplifier using MOSIS 1.2μm standard digital CMOS process.” Midwest Symposium on Circuits and Systems, vol. 1, Dec. 1994, pp. 155–57.
Lee M, Brooke MA. Design, fabrication, and test of a 125Mb/s transimpedance amplifier using MOSIS 1.2μm standard digital CMOS process. Midwest Symposium on Circuits and Systems. 1994 Dec 1;1:155–157.
Published In
Midwest Symposium on Circuits and Systems
Publication Date
December 1, 1994
Volume
1
Start / End Page
155 / 157