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Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium

Publication ,  Journal Article
Reichert, W; Chen, CY; Li, WM; Shield, JE; Cohen, RM; Simons, DS; Chi, PH
Published in: Journal of Applied Physics
December 1, 1995

The zinc concentration measured after organometallic vapor phase epitaxy (OMVPE) growth on (100)-oriented GaAs at 700°C has been compared to the zinc concentration measured after in-diffusion under near-equilibrium conditions. During diffusion, the concentration of Zn 20 nm below the surface was found to vary with P1/2Zn, as expected for bulk solid-vapor equilibrium. During growth, the concentration of Zn varied linearly with P Zn up to a maximum value which was found to correspond to the solubility limit set by second phase formation, e.g., growth of Zn 3As2. Although large differences were observed between the results of the two experiments when using nominally identical ambient conditions, all of the results are consistent with a thermodynamic model in which the Fermi level at the surface is pinned approximately 200 meV below the intrinsic Fermi level. Typical OMVPE growth conditions appear to give a bulk zinc concentration which is supersaturated relative to the ambient partial pressures used, and to enhance the diffusion of Zn into the substrate. © 1995 American Institute of Physics.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1995

Volume

77

Issue

5

Start / End Page

1902 / 1906

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Reichert, W., Chen, C. Y., Li, W. M., Shield, J. E., Cohen, R. M., Simons, D. S., & Chi, P. H. (1995). Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium. Journal of Applied Physics, 77(5), 1902–1906. https://doi.org/10.1063/1.358821
Reichert, W., C. Y. Chen, W. M. Li, J. E. Shield, R. M. Cohen, D. S. Simons, and P. H. Chi. “Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium.” Journal of Applied Physics 77, no. 5 (December 1, 1995): 1902–6. https://doi.org/10.1063/1.358821.
Reichert W, Chen CY, Li WM, Shield JE, Cohen RM, Simons DS, et al. Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium. Journal of Applied Physics. 1995 Dec 1;77(5):1902–6.
Reichert, W., et al. “Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium.” Journal of Applied Physics, vol. 77, no. 5, Dec. 1995, pp. 1902–06. Scopus, doi:10.1063/1.358821.
Reichert W, Chen CY, Li WM, Shield JE, Cohen RM, Simons DS, Chi PH. Incorporation of Zn in GaAs during organometallic vapor phase epitaxy growth compared to equilibrium. Journal of Applied Physics. 1995 Dec 1;77(5):1902–1906.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1995

Volume

77

Issue

5

Start / End Page

1902 / 1906

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences