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Random berry phase magnetoresistance as a probe of interface roughness in Si MOSFET'S

Publication ,  Journal Article
Mathur, H; Baranger, HU
Published in: Physical Review B - Condensed Matter and Materials Physics
2001

The effect of silicon-oxide interface roughness on the weak-localization magnetoconductance of a silicon metal-oxide-semiconductor field-effect transistor in a magnetic field, tilted with respect to the interface, is studied. It is shown that an electron picks up a random Berry's phase as it traverses a closed orbit. Effectively, due to roughness, the electron sees a uniform field parallel to the interface as a random perpendicular field. At zero parallel field the dependence of the conductance on the perpendicular field has a well-known form, the weak-localization line shape. Here the effect of applying a fixed parallel field on the line shape is analyzed. Many types of behavior are found including homogeneous broadening, inhomogeneous broadening, and a remarkable regime in which the change in line shape depends only on the magnetic field, the two length scales that characterize the interface roughness, and fundamental constants. Good agreement is obtained with experiments that are in the homogeneous broadening limit. The implications for using weak-localization magneto-conductance as a probe of interface roughness, as proposed by Wheeler and co-workers, are discussed.

Duke Scholars

Published In

Physical Review B - Condensed Matter and Materials Physics

ISSN

0163-1829

Publication Date

2001

Volume

64

Issue

23

Start / End Page

2353251 / 23532520
 

Citation

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ICMJE
MLA
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Mathur, H., & Baranger, H. U. (2001). Random berry phase magnetoresistance as a probe of interface roughness in Si MOSFET'S. Physical Review B - Condensed Matter and Materials Physics, 64(23), 2353251–23532520.
Mathur, H., and H. U. Baranger. “Random berry phase magnetoresistance as a probe of interface roughness in Si MOSFET'S.” Physical Review B - Condensed Matter and Materials Physics 64, no. 23 (2001): 2353251–520.
Mathur H, Baranger HU. Random berry phase magnetoresistance as a probe of interface roughness in Si MOSFET'S. Physical Review B - Condensed Matter and Materials Physics. 2001;64(23):2353251–23532520.
Mathur, H., and H. U. Baranger. “Random berry phase magnetoresistance as a probe of interface roughness in Si MOSFET'S.” Physical Review B - Condensed Matter and Materials Physics, vol. 64, no. 23, 2001, pp. 2353251–23532520.
Mathur H, Baranger HU. Random berry phase magnetoresistance as a probe of interface roughness in Si MOSFET'S. Physical Review B - Condensed Matter and Materials Physics. 2001;64(23):2353251–23532520.

Published In

Physical Review B - Condensed Matter and Materials Physics

ISSN

0163-1829

Publication Date

2001

Volume

64

Issue

23

Start / End Page

2353251 / 23532520