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Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition
Diamond has been successfully nucleated on mirror finish single-crystal β-SiC films via bias-enhanced microwave plasma chemical vapor deposition. Initial scanning electron microscopy indicated that approximately 50% of the diamond grains were oriented relative to the SiC substrate. Further, high resolution cross-sectional transmission electron microscopy (TEM) and electron diffraction confirmed that the diamond was in epitaxial alignment with the silicon carbide, with the D(100)//SiC(100) and D〈110〉//SiC〈110〉. The high resolution TEM also revealed an approximate 5° tilt about 〈110〉 towards 〈110〉. This tilting is believed to be the result of the high density of misfit dislocations at the interface. Speculations on the role of biasing in the promotion of epitaxial diamond nucleation on a foreign substrate are also discussed. © 1993.
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- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 0912 Materials Engineering
- 0910 Manufacturing Engineering
- 0904 Chemical Engineering
Citation
![Journal cover image](https://secure.syndetics.com/index.aspx?isbn=/lc.gif&issn=0925-9635&client=dukeuniv)
Published In
DOI
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 0912 Materials Engineering
- 0910 Manufacturing Engineering
- 0904 Chemical Engineering