Electrochemical AFM "dip-pen" nanolithography and more
Publication
, Journal Article
Li, Y; Maynor, B; Liu, J
Published in: Chinese Journal of Inorganic Chemistry
December 1, 2002
A general approach for fabricating metallic and semiconducting nanostructures has been developed based on "dip-pen" nanolithography combined with electrochemical reduction of water-soluble salts. This method can be used to directly write many different types of metal or semiconductor features on Si substrates with sub 50 nanometer linewidth. This simple but powerful method has great potential in fabricating functional nanodevices with high degree of control over their locations and structures.
Duke Scholars
Published In
Chinese Journal of Inorganic Chemistry
ISSN
1001-4861
Publication Date
December 1, 2002
Volume
18
Issue
1
Start / End Page
75 / 78
Related Subject Headings
- Inorganic & Nuclear Chemistry
- 3402 Inorganic chemistry
- 0302 Inorganic Chemistry
Citation
APA
Chicago
ICMJE
MLA
NLM
Li, Y., Maynor, B., & Liu, J. (2002). Electrochemical AFM "dip-pen" nanolithography and more. Chinese Journal of Inorganic Chemistry, 18(1), 75–78.
Li, Y., B. Maynor, and J. Liu. “Electrochemical AFM "dip-pen" nanolithography and more.” Chinese Journal of Inorganic Chemistry 18, no. 1 (December 1, 2002): 75–78.
Li Y, Maynor B, Liu J. Electrochemical AFM "dip-pen" nanolithography and more. Chinese Journal of Inorganic Chemistry. 2002 Dec 1;18(1):75–8.
Li, Y., et al. “Electrochemical AFM "dip-pen" nanolithography and more.” Chinese Journal of Inorganic Chemistry, vol. 18, no. 1, Dec. 2002, pp. 75–78.
Li Y, Maynor B, Liu J. Electrochemical AFM "dip-pen" nanolithography and more. Chinese Journal of Inorganic Chemistry. 2002 Dec 1;18(1):75–78.
Published In
Chinese Journal of Inorganic Chemistry
ISSN
1001-4861
Publication Date
December 1, 2002
Volume
18
Issue
1
Start / End Page
75 / 78
Related Subject Headings
- Inorganic & Nuclear Chemistry
- 3402 Inorganic chemistry
- 0302 Inorganic Chemistry