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Quantum dot long-wavelength detectors

Publication ,  Journal Article
Bhattacharya, P; Stiff-Roberts, AD; Krishna, S; Kennerly, S
Published in: Materials Research Society Symposium - Proceedings
January 1, 2002

Long-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better high-temperature performance. We have obtained extremely low dark currents (Idark = 1.7 pA, T = 100 K, Vbias = 0.1 V), high detectivities (D* = 2.9×108 cmHz1/2/W, T = 100 K, Vbias = 0.2 V), and high operating temperatures (T = 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, will be described and discussed.

Duke Scholars

Published In

Materials Research Society Symposium - Proceedings

ISSN

0272-9172

Publication Date

January 1, 2002

Volume

692

Start / End Page

109 / 116
 

Citation

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Bhattacharya, P., Stiff-Roberts, A. D., Krishna, S., & Kennerly, S. (2002). Quantum dot long-wavelength detectors. Materials Research Society Symposium - Proceedings, 692, 109–116.
Bhattacharya, P., A. D. Stiff-Roberts, S. Krishna, and S. Kennerly. “Quantum dot long-wavelength detectors.” Materials Research Society Symposium - Proceedings 692 (January 1, 2002): 109–16.
Bhattacharya P, Stiff-Roberts AD, Krishna S, Kennerly S. Quantum dot long-wavelength detectors. Materials Research Society Symposium - Proceedings. 2002 Jan 1;692:109–16.
Bhattacharya, P., et al. “Quantum dot long-wavelength detectors.” Materials Research Society Symposium - Proceedings, vol. 692, Jan. 2002, pp. 109–16.
Bhattacharya P, Stiff-Roberts AD, Krishna S, Kennerly S. Quantum dot long-wavelength detectors. Materials Research Society Symposium - Proceedings. 2002 Jan 1;692:109–116.

Published In

Materials Research Society Symposium - Proceedings

ISSN

0272-9172

Publication Date

January 1, 2002

Volume

692

Start / End Page

109 / 116