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Noise-induced current switching in semiconductor superlattices: observation of nonexponential kinetics in a high-dimensional system.

Publication ,  Journal Article
Bomze, Y; Hey, R; Grahn, HT; Teitsworth, SW
Published in: Physical review letters
July 2012

We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and bistability; precision, high-bandwidth current switching data are collected in response to steps in the applied voltage to final voltages V1 near the end of a current branch. For a range of V1 values, the measured switching times vary stochastically. At short times (≲10  μs), the switching time distributions decay exponentially, while at longer times the distributions develop nonexponential tails that follow an approximate power law over several decades. The power law decay behavior is attributed to the presence of multiple switching pathways, which may arise from small spatial variations in the superlattice growth parameters.

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Published In

Physical review letters

DOI

EISSN

1079-7114

ISSN

0031-9007

Publication Date

July 2012

Volume

109

Issue

2

Start / End Page

026801

Related Subject Headings

  • Semiconductors
  • Oscillometry
  • Models, Theoretical
  • Kinetics
  • General Physics
  • Gallium
  • Electronics
  • Arsenicals
  • Arsenic
  • Amplifiers, Electronic
 

Citation

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Bomze, Y., Hey, R., Grahn, H. T., & Teitsworth, S. W. (2012). Noise-induced current switching in semiconductor superlattices: observation of nonexponential kinetics in a high-dimensional system. Physical Review Letters, 109(2), 026801. https://doi.org/10.1103/physrevlett.109.026801
Bomze, Yu, R. Hey, H. T. Grahn, and S. W. Teitsworth. “Noise-induced current switching in semiconductor superlattices: observation of nonexponential kinetics in a high-dimensional system.Physical Review Letters 109, no. 2 (July 2012): 026801. https://doi.org/10.1103/physrevlett.109.026801.
Bomze Y, Hey R, Grahn HT, Teitsworth SW. Noise-induced current switching in semiconductor superlattices: observation of nonexponential kinetics in a high-dimensional system. Physical review letters. 2012 Jul;109(2):026801.
Bomze, Yu, et al. “Noise-induced current switching in semiconductor superlattices: observation of nonexponential kinetics in a high-dimensional system.Physical Review Letters, vol. 109, no. 2, July 2012, p. 026801. Epmc, doi:10.1103/physrevlett.109.026801.
Bomze Y, Hey R, Grahn HT, Teitsworth SW. Noise-induced current switching in semiconductor superlattices: observation of nonexponential kinetics in a high-dimensional system. Physical review letters. 2012 Jul;109(2):026801.

Published In

Physical review letters

DOI

EISSN

1079-7114

ISSN

0031-9007

Publication Date

July 2012

Volume

109

Issue

2

Start / End Page

026801

Related Subject Headings

  • Semiconductors
  • Oscillometry
  • Models, Theoretical
  • Kinetics
  • General Physics
  • Gallium
  • Electronics
  • Arsenicals
  • Arsenic
  • Amplifiers, Electronic