Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias
Publication
, Journal Article
Olafsen, LJ; Daniels-Race, T; Kendall, RE; Teitsworth, SW
Published in: Superlattices and Microstructures
January 1, 2000
GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current-voltage measurements are presented for two MBE-grown structures clad with Si-doped Al0.45Ga0.55As layers on n+-GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier.
Duke Scholars
Published In
Superlattices and Microstructures
DOI
ISSN
0749-6036
Publication Date
January 1, 2000
Volume
27
Issue
1
Start / End Page
7 / 14
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 0206 Quantum Physics
- 0205 Optical Physics
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Olafsen, L. J., Daniels-Race, T., Kendall, R. E., & Teitsworth, S. W. (2000). Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias. Superlattices and Microstructures, 27(1), 7–14. https://doi.org/10.1006/spmi.1999.0811
Olafsen, L. J., T. Daniels-Race, R. E. Kendall, and S. W. Teitsworth. “Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias.” Superlattices and Microstructures 27, no. 1 (January 1, 2000): 7–14. https://doi.org/10.1006/spmi.1999.0811.
Olafsen LJ, Daniels-Race T, Kendall RE, Teitsworth SW. Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias. Superlattices and Microstructures. 2000 Jan 1;27(1):7–14.
Olafsen, L. J., et al. “Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias.” Superlattices and Microstructures, vol. 27, no. 1, Jan. 2000, pp. 7–14. Scopus, doi:10.1006/spmi.1999.0811.
Olafsen LJ, Daniels-Race T, Kendall RE, Teitsworth SW. Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias. Superlattices and Microstructures. 2000 Jan 1;27(1):7–14.
Published In
Superlattices and Microstructures
DOI
ISSN
0749-6036
Publication Date
January 1, 2000
Volume
27
Issue
1
Start / End Page
7 / 14
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 0206 Quantum Physics
- 0205 Optical Physics
- 0204 Condensed Matter Physics