High-conductance, low-leakage diamond Schottky diodes
Publication
, Journal Article
Geis, MW; Efremow, NN; Von Windheim, JA
Published in: Applied Physics Letters
December 1, 1993
Schottky diodes formed of Al, Au, and Hg on diamond have been characterized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O, H2, or O2 result in high surface leakage, while plasmas formed from N2 or from CF4 with 8.5% O 2 result in total leakage <1000 e/s. Annealing the diamond at 660°C before the Schottky diode is fabricated causes an increase in the forward conductance with n-factors approaching one. This annealing removes a compensated subsurface layer that often occurs in diamond during normal processing.
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Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
63
Issue
7
Start / End Page
952 / 954
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
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Chicago
ICMJE
MLA
NLM
Geis, M. W., Efremow, N. N., & Von Windheim, J. A. (1993). High-conductance, low-leakage diamond Schottky diodes. Applied Physics Letters, 63(7), 952–954. https://doi.org/10.1063/1.109855
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
63
Issue
7
Start / End Page
952 / 954
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences