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High-conductance, low-leakage diamond Schottky diodes

Publication ,  Journal Article
Geis, MW; Efremow, NN; Von Windheim, JA
Published in: Applied Physics Letters
December 1, 1993
Published version (DOI)

Schottky diodes formed of Al, Au, and Hg on diamond have been characterized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O, H2, or O2 result in high surface leakage, while plasmas formed from N2 or from CF4 with 8.5% O 2 result in total leakage <1000 e/s. Annealing the diamond at 660°C before the Schottky diode is fabricated causes an increase in the forward conductance with n-factors approaching one. This annealing removes a compensated subsurface layer that often occurs in diamond during normal processing.

Duke Scholars

Jesko Von Windheim
Author Jesko Von Windheim Environmental Social Systems

Published In

Applied Physics Letters

DOI

10.1063/1.109855

ISSN

0003-6951

Publication Date

December 1, 1993

Volume

63

Issue

7

Start / End Page

952 / 954

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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MLA
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Geis, M. W., Efremow, N. N., & Von Windheim, J. A. (1993). High-conductance, low-leakage diamond Schottky diodes. Applied Physics Letters, 63(7), 952–954. https://doi.org/10.1063/1.109855
Geis, M. W., N. N. Efremow, and J. A. Von Windheim. “High-conductance, low-leakage diamond Schottky diodes.” Applied Physics Letters 63, no. 7 (December 1, 1993): 952–54. https://doi.org/10.1063/1.109855.
Geis MW, Efremow NN, Von Windheim JA. High-conductance, low-leakage diamond Schottky diodes. Applied Physics Letters. 1993 Dec 1;63(7):952–4.
Geis, M. W., et al. “High-conductance, low-leakage diamond Schottky diodes.” Applied Physics Letters, vol. 63, no. 7, Dec. 1993, pp. 952–54. Scopus, doi:10.1063/1.109855.
Geis MW, Efremow NN, Von Windheim JA. High-conductance, low-leakage diamond Schottky diodes. Applied Physics Letters. 1993 Dec 1;63(7):952–954.

Published In

Applied Physics Letters

DOI

10.1063/1.109855

ISSN

0003-6951

Publication Date

December 1, 1993

Volume

63

Issue

7

Start / End Page

952 / 954

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences