3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers

Conference Paper

Resistive random access memory (ReRAM) has been demonstrated as a promising non-volatile memory technology with features such as high density, low power, good scalability, easy fabrication and compatibility to the existing CMOS technology. The conventional three-dimensional (3D) bipolar ReRAM design usually stacks up multiple memory layers that are separated by isolation layers, e.g. Spin-on-Glass (SOG). In this paper, we propose a new 3D bipolar ReRAM design with interleaved complimentary memory layers (3D-ICML) which can form a memory island without any isolation. The set of metal wires between two adjacent memory layers in vertical direction can be shared. 3D-ICML design can reduce fabrication complexity and increase memory density. Meanwhile, multiple memory cells interconnected horizontally and vertically can be accessed at the same time, which dramatically increases the memory bandwidth. © 2011 EDAA.

Duke Authors

Cited Authors

  • Chen, YC; Li, H; Chen, Y; Pino, RE

Published Date

  • May 31, 2011

Published In

Start / End Page

  • 583 - 586

International Standard Serial Number (ISSN)

  • 1530-1591

International Standard Book Number 13 (ISBN-13)

  • 9783981080179

Citation Source

  • Scopus