A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM)
Publication
, Conference
Chen, Y; Li, H; Wang, X; Zhu, W; Xu, W; Zhang, T
Published in: Proceedings -Design, Automation and Test in Europe, DATE
June 9, 2010
We proposed a novel self-reference sensing scheme for Spin-Transfer Torque Random Access Memory (STT-RAM) to overcome the large bit-to-bit variation of Magnetic Tunneling Junction (MTJ) resistance. Different from all the existing schemes, our solution is nondestructive: The stored value in the STT-RAM cell does NOT need to be overwritten by a reference value. And hence, long write-back operation (of the original stored value) is eliminated. The robustness analyses of the existing scheme and our proposed nondestructive scheme are also presented. The measurement results from a 16kb testing chip successfully confirmed the effectiveness of our technique. © 2010 EDAA.
Duke Scholars
Published In
Proceedings -Design, Automation and Test in Europe, DATE
ISSN
1530-1591
ISBN
9783981080162
Publication Date
June 9, 2010
Start / End Page
148 / 153
Citation
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ICMJE
MLA
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Chen, Y., Li, H., Wang, X., Zhu, W., Xu, W., & Zhang, T. (2010). A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM). In Proceedings -Design, Automation and Test in Europe, DATE (pp. 148–153).
Chen, Y., H. Li, X. Wang, W. Zhu, W. Xu, and T. Zhang. “A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM).” In Proceedings -Design, Automation and Test in Europe, DATE, 148–53, 2010.
Chen Y, Li H, Wang X, Zhu W, Xu W, Zhang T. A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM). In: Proceedings -Design, Automation and Test in Europe, DATE. 2010. p. 148–53.
Chen, Y., et al. “A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM).” Proceedings -Design, Automation and Test in Europe, DATE, 2010, pp. 148–53.
Chen Y, Li H, Wang X, Zhu W, Xu W, Zhang T. A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM). Proceedings -Design, Automation and Test in Europe, DATE. 2010. p. 148–153.
Published In
Proceedings -Design, Automation and Test in Europe, DATE
ISSN
1530-1591
ISBN
9783981080162
Publication Date
June 9, 2010
Start / End Page
148 / 153