A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM)

Conference Paper

We proposed a novel self-reference sensing scheme for Spin-Transfer Torque Random Access Memory (STT-RAM) to overcome the large bit-to-bit variation of Magnetic Tunneling Junction (MTJ) resistance. Different from all the existing schemes, our solution is nondestructive: The stored value in the STT-RAM cell does NOT need to be overwritten by a reference value. And hence, long write-back operation (of the original stored value) is eliminated. The robustness analyses of the existing scheme and our proposed nondestructive scheme are also presented. The measurement results from a 16kb testing chip successfully confirmed the effectiveness of our technique. © 2010 EDAA.

Duke Authors

Cited Authors

  • Chen, Y; Li, H; Wang, X; Zhu, W; Xu, W; Zhang, T

Published Date

  • June 9, 2010

Published In

Start / End Page

  • 148 - 153

International Standard Serial Number (ISSN)

  • 1530-1591

International Standard Book Number 13 (ISBN-13)

  • 9783981080162

Citation Source

  • Scopus