Study of silicon photomultiplier performance in external electric fields

Journal Article (Journal Article)

We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

Full Text

Duke Authors

Cited Authors

  • Sun, XL; Tolba, T; Cao, GF; Lv, P; Wen, LJ; Odian, A; Vachon, F; Alamre, A; Albert, JB; Anton, G; Arnquist, IJ; Badhrees, I; Barbeau, PS; Beck, D; Belov, V; Bhatta, T; Bourque, F; Brodsky, JP; Brown, E; Brunner, T; Burenkov, A; Cao, L; Cen, WR; Chambers, C; Charlebois, SA; Chiu, M; Cleveland, B; Coon, M; Côté, M; Craycraft, A; Cree, W; Dalmasson, J; Daniels, T; Darroch, L; Daugherty, SJ; Daughhetee, J; Delaquis, S; Mesrobian-Kabakian, AD; Devoe, R; Dilling, J; Ding, YY; Dolinski, MJ; Dragone, A; Echevers, J; Fabris, L; Fairbank, D; Fairbank, W; Farine, J; Feyzbakhsh, S; Fierlinger, P; Fontaine, R; Fudenberg, D; Gallina, G; Giacomini, G; Gornea, R; Gratta, G; Hansen, EV; Harris, D; Heffner, M; Hoppe, EW; Hößl, J; House, A; Hufschmidt, P; Hughes, M; Ito, Y; Iverson, A; Jamil, A; Jessiman, C; Jewell, MJ; Jiang, XS; Karelin, A; Kaufman, LJ; Kodroff, D; Koffas, T; Kravitz, S; Krücken, R; Kuchenkov, A; Kumar, KS; Lan, Y; Larson, A; Leonard, DS; Li, G; Li, S; Li, Z; Licciardi, C; Lin, YH; Maclellan, R; Michel, T; Moe, M; Mong, B; Moore, DC; Murray, K; Newby, RJ; Ning, Z; Njoya, O; Nolet, F; Nusair, O; Odgers, K; Oriunno, M; Orrell, JL

Published Date

  • September 17, 2018

Published In

Volume / Issue

  • 13 / 9

Electronic International Standard Serial Number (EISSN)

  • 1748-0221

Digital Object Identifier (DOI)

  • 10.1088/1748-0221/13/09/T09006

Citation Source

  • Scopus