Study of silicon photomultiplier performance in external electric fields
Publication
, Journal Article
Sun, XL; Tolba, T; Cao, GF; Lv, P; Wen, LJ; Odian, A; Vachon, F; Alamre, A; Albert, JB; Anton, G; Arnquist, IJ; Badhrees, I; Barbeau, PS ...
Published in: Journal of Instrumentation
September 17, 2018
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.
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Published In
Journal of Instrumentation
DOI
EISSN
1748-0221
Publication Date
September 17, 2018
Volume
13
Issue
9
Related Subject Headings
- Nuclear & Particles Physics
- 51 Physical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
Citation
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Chicago
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Sun, X. L., Tolba, T., Cao, G. F., Lv, P., Wen, L. J., Odian, A., … Orrell, J. L. (2018). Study of silicon photomultiplier performance in external electric fields. Journal of Instrumentation, 13(9). https://doi.org/10.1088/1748-0221/13/09/T09006
Sun, X. L., T. Tolba, G. F. Cao, P. Lv, L. J. Wen, A. Odian, F. Vachon, et al. “Study of silicon photomultiplier performance in external electric fields.” Journal of Instrumentation 13, no. 9 (September 17, 2018). https://doi.org/10.1088/1748-0221/13/09/T09006.
Sun XL, Tolba T, Cao GF, Lv P, Wen LJ, Odian A, et al. Study of silicon photomultiplier performance in external electric fields. Journal of Instrumentation. 2018 Sep 17;13(9).
Sun, X. L., et al. “Study of silicon photomultiplier performance in external electric fields.” Journal of Instrumentation, vol. 13, no. 9, Sept. 2018. Scopus, doi:10.1088/1748-0221/13/09/T09006.
Sun XL, Tolba T, Cao GF, Lv P, Wen LJ, Odian A, Vachon F, Alamre A, Albert JB, Anton G, Arnquist IJ, Badhrees I, Barbeau PS, Beck D, Belov V, Bhatta T, Bourque F, Brodsky JP, Brown E, Brunner T, Burenkov A, Cao L, Cen WR, Chambers C, Charlebois SA, Chiu M, Cleveland B, Coon M, Côté M, Craycraft A, Cree W, Dalmasson J, Daniels T, Darroch L, Daugherty SJ, Daughhetee J, Delaquis S, Mesrobian-Kabakian AD, Devoe R, Dilling J, Ding YY, Dolinski MJ, Dragone A, Echevers J, Fabris L, Fairbank D, Fairbank W, Farine J, Feyzbakhsh S, Fierlinger P, Fontaine R, Fudenberg D, Gallina G, Giacomini G, Gornea R, Gratta G, Hansen EV, Harris D, Heffner M, Hoppe EW, Hößl J, House A, Hufschmidt P, Hughes M, Ito Y, Iverson A, Jamil A, Jessiman C, Jewell MJ, Jiang XS, Karelin A, Kaufman LJ, Kodroff D, Koffas T, Kravitz S, Krücken R, Kuchenkov A, Kumar KS, Lan Y, Larson A, Leonard DS, Li G, Li S, Li Z, Licciardi C, Lin YH, Maclellan R, Michel T, Moe M, Mong B, Moore DC, Murray K, Newby RJ, Ning Z, Njoya O, Nolet F, Nusair O, Odgers K, Oriunno M, Orrell JL. Study of silicon photomultiplier performance in external electric fields. Journal of Instrumentation. 2018 Sep 17;13(9).
Published In
Journal of Instrumentation
DOI
EISSN
1748-0221
Publication Date
September 17, 2018
Volume
13
Issue
9
Related Subject Headings
- Nuclear & Particles Physics
- 51 Physical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences