Electron trapping in SiO2at 295 and 77 °K

Published

Journal Article

The electron trapping behavior of SiO2has been measured as a function of thickness at 295 and 77 °K. The devices used were metal-oxide-semiconductor devices with the SiO2grown thermally. The results indicate bulk traps are dominant at 295 °K and traps associated with the Si-SiO2interface are dominant at 77 °K. The effect of processing conditions was also studied and the optimum conditions are different for the two temperatures used for the measurements. These observations have been verified using a photo I-V technique. The generation of donor states in the SiO2near the Si-SiO2interface was observed as a result of the electron current through the SiO2.

Full Text

Duke Authors

Cited Authors

  • Young, DR; Irene, EA; DiMaria, DJ; De Keersmaecker, RF; Massoud, HZ

Published Date

  • December 1, 1979

Published In

Volume / Issue

  • 50 / 10

Start / End Page

  • 6366 - 6372

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.325727

Citation Source

  • Scopus