Electron trapping in SiO2 at 295 and 77 °K
Publication
, Journal Article
Young, DR; Irene, EA; DiMaria, DJ; De Keersmaecker, RF; Massoud, HZ
Published in: Journal of Applied Physics
December 1, 1979
The electron trapping behavior of SiO2 has been measured as a function of thickness at 295 and 77 °K. The devices used were metal-oxide-semiconductor devices with the SiO2 grown thermally. The results indicate bulk traps are dominant at 295 °K and traps associated with the Si-SiO2 interface are dominant at 77 °K. The effect of processing conditions was also studied and the optimum conditions are different for the two temperatures used for the measurements. These observations have been verified using a photo I-V technique. The generation of donor states in the SiO2 near the Si-SiO2 interface was observed as a result of the electron current through the SiO2.
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Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
December 1, 1979
Volume
50
Issue
10
Start / End Page
6366 / 6372
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
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Young, D. R., Irene, E. A., DiMaria, D. J., De Keersmaecker, R. F., & Massoud, H. Z. (1979). Electron trapping in SiO2 at 295 and 77 °K. Journal of Applied Physics, 50(10), 6366–6372. https://doi.org/10.1063/1.325727
Young, D. R., E. A. Irene, D. J. DiMaria, R. F. De Keersmaecker, and H. Z. Massoud. “Electron trapping in SiO2 at 295 and 77 °K.” Journal of Applied Physics 50, no. 10 (December 1, 1979): 6366–72. https://doi.org/10.1063/1.325727.
Young DR, Irene EA, DiMaria DJ, De Keersmaecker RF, Massoud HZ. Electron trapping in SiO2 at 295 and 77 °K. Journal of Applied Physics. 1979 Dec 1;50(10):6366–72.
Young, D. R., et al. “Electron trapping in SiO2 at 295 and 77 °K.” Journal of Applied Physics, vol. 50, no. 10, Dec. 1979, pp. 6366–72. Scopus, doi:10.1063/1.325727.
Young DR, Irene EA, DiMaria DJ, De Keersmaecker RF, Massoud HZ. Electron trapping in SiO2 at 295 and 77 °K. Journal of Applied Physics. 1979 Dec 1;50(10):6366–6372.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
December 1, 1979
Volume
50
Issue
10
Start / End Page
6366 / 6372
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences